
Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019   Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.

Optical Properties of Single Coaxial Nanowires LDOS and Purcell Factor
02 Oct 2018   Contributor(s):: Sulaiman AbdulHadi, Amartya Dutta, Katherine Hansen, Chen Yang
Computes LDOS and Purcell Factor of a single nanowire with up to 2 shell layers using Mieformalism

OMEN
For now this page is a rather empty place holder for references on nanoHUB to the OMEN tool.
There is a more complete OMEN web page that is maintained by the Nanoelectronic Modeling Group of Prof....
http://nanohub.org/wiki/OMEN

Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017   Contributor(s):: Igor Bejenari
A given review describes models based on WentzelKramersBrillouin approximation, which are used to obtain IV characteristics for ballistic CNTFETs with SchottkyBarrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...

Adrian Suteu
Source Graphene is the first based Romanian company focused on producing and supplying graphene oxide in water dispersion. Source Graphene has the capacity to obtain high, cost effective amounts of...
http://nanohub.org/members/175145

Quantum Coherent Transport in Atoms & Electrons
21 Jun 2017   Contributor(s):: Yong P. Chen
I will discuss some recent experimental examples from my lab studying quantum coherent transport and interferometry in electrons as well as cold atoms. For example, phase coherent electron transport and interference around a cylinder realized in a nanowire of topological insulator...

Building a Topological Quantum Computer 101
20 Jun 2017   Contributor(s):: Michael Freedman
Michael Freeman shares his perspective on how we should approach building a quantum computer, starting with the mathematical roots and moving through the physics to concrete engineering and materials growth challenges on which success will hinge. He will then discuss a new, enhanced,...

jesus alexis Gonzalez
http://nanohub.org/members/161639

AlAmin Sheikh
http://nanohub.org/members/160887

Piezo Nanomaterials and Green Energy
19 Oct 2016   Contributor(s):: Rusen Yang
This presentation will introduce the fundamental principle of nanogenerator and its potential applications.

Chowdhury, Prodipto
http://nanohub.org/members/152180

Xiaohui Xu
http://nanohub.org/members/149988

Modeling Quantum Acceleration (MultiBand Drift) of Bloch Waves in Nanowires
24 Mar 2016   Contributor(s):: Raghuraj Hathwar, marco saraniti, Stephen M. Goodnick
IWCE 2015 presentation. Abstract and more information to be added at a later date.

E304 L4.2.2: Nanomaterials  Nanostrucutes (dots, wires)
18 Mar 2016   Contributor(s):: ASSIST ERC

Magnetic Nanowires: Revolutionizing Hard Drives, Random Access Memory, & Cancer Treatment
18 Feb 2016   Contributor(s):: Beth Stadler
This talk will reveal synthesis secrets for nmcontrol of layer thicknesses, even for difficult alloys, which has enabled studies of magnetization reversal, magnetoelasticity, giant magnetoresistance, and spin transfer torqueswitching. These nanowires will mitigate the ITRS Roadmap’s...

Photonic Quantum Computation & Quantum Simulation
11 Feb 2016   Contributor(s):: Philip Walther
The advantages of the photons makes optical quantum system ideally suited for fundamental quantum physics experiments and a variety of applications in quantum information processing. Here I will briefly review privacypreserving photonic quantum cloud computing, where quantum information is...

Anisotropic Schrödinger Equation Quantum Corrections for 3D Monte Carlo Simulations of Nanoscale Multigate Transistors
05 Jan 2016   Contributor(s):: Karol Kalna, Muhammad Ali A. Elmessary, Daniel Nagy, Manuel Aldegunde
IWCE 2015 presentation. We incorporated anisotropic 2D Schrodinger equation based quantum corrections (SEQC) that depends on valley orientation into a 3D Finite Element (FE) Monte Carlo (MC) simulation toolbox. The MC toolbox was tested against experimental IDVG characteristics of the 22 nm gate...

VINUTH NAGENDRA
http://nanohub.org/members/134917

Phonon Interactions in SingleDopantBased Transistors: Temperature and Size Dependence
25 Nov 2015   Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada
IWCE 2015 presentation. in this work we investigate the dependence of electronphonon scattering in single dopantbased nanowire transistor with respect to temperature and dimensions. we use a 3d realspace nonequilibrium green': ; s function (negf) approach where electronphonon...

Mode Space Tight Binding Model for UltraFast Simulations of IIIV Nanowire MOSFETs and Heterojunction TFETs
13 Nov 2015   Contributor(s):: Aryan Afzalian, Jun Huang, Hesameddin Ilatikhameneh, Santiago Alonso Perez Rubiano, Tillmann Christoph Kubis, Michael Povolotskyi, Gerhard Klimeck
IWCE 2015 presentation. we explore here the suitability of a mode space tight binding algorithm to various iiiv homo and heterojunction nanowire devices. we show that in iiiv materials, the number of unphysical modes to eliminate is very high compared to the si case previously reported...