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SCALE Random Telegraph Noise and Radiation Reponse of 80nm Vertical Charge-Trapping NAND Flash Memory Devices with SiON Tunneling Oxide
Online Presentations | 02 Jan 2024 | Contributor(s):: Isabella Wynocker
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SCALE Gathering Essential Data for Cryogenic PDK Advancement and Supporting the Characterization of 90 nm Transistors
Online Presentations | 19 Sep 2023 | Contributor(s):: Jayden Chen
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Unimore Resistive Random Access Memory (RRAM) Verilog-A Model
22 May 2019 | Compact Models | Contributor(s):
By Francesco Maria Puglisi1, Tommaso Zanotti1, Paolo Pavan1
Università di Modena e Reggio Emilia
The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).
https://nanohub.org/publications/289/?v=1
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TrapSimulator
Tools | 28 Sep 2016 | Contributor(s):: Ricardo Carvalho de Melos
A RTN behavior Simulation Tool
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On the Validity of the Harmonic Potential Energy Surface Approximation for Nonradiative Multiphonon Charge Transitions in Oxide Defects
Online Presentations | 17 Feb 2016 | Contributor(s):: Yannick Wimmer, Wolfgang Goes
IWCE Presentation. Hole trapping in oxide defects in the gate insulator of MOSFET transistors has been linked to a wide range of phenomena like random telegraph noise, 1/f noise, bias temperature instability (BTI), stress-induced leakage current and hot carrier degradation [1–5]....
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ECE 695A Lecture 7: Trapping in Pre-existing Traps
Online Presentations | 28 Jan 2013 | Contributor(s):: Muhammad Alam
Outline:Pre-existing vs. stress-induced trapsVoltage-shift in pre-existing bulk/interface trapsRandom Telegraph Noise, 1/f noiseConclusion
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Atomistic Simulations of Reliability
Teaching Materials | 01 Jul 2010 | Contributor(s):: Dragica Vasileska
Discrete impurity effects in terms of their statistical variations in number and position in the inversion and depletion region of a MOSFET, as the gate length is aggressively scaled, have recently been researched as a major cause of reliability degradation observed in intra-die and die-to-die...
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Research Within Vasileska Group
Presentation Materials | 28 Jun 2010 | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.