All Categories (1-3 of 3)

1. IWCN 2021: Simulation of Ballistic Spin-MOSFET Devices with Ferromagnetic Channels

   15 Jul 2021 | | Contributor(s):: Patrizio Graziosi, Neophytos Neophytou

   In this work, using the semiclassical top-of-the-barrier FET model, and a spin dependent contact resistance model derived from, we explore the operation of a spin-MOSFET that utilizes such ferromagnetic semiconductors as channel materials, in addition to ferromagnetic source/drain contacts.

2. Spin Lifetime Dependence on Valley Splitting in Thin Silicon Films

   15 Oct 2015 | | Contributor(s):: Joydeep Ghosh, Dmitri Osintsev, Viktor Sverdlov, S. Selberherr

   IWCE 2015 presentation.  the electron spin properties are promising for future spin-driven devices. in contrast to charge, spin is not a conserved quantity, and having sufficiently long spin lifetime is critical for applications. silicon, the major material of microelectronics, also appears...

3. 2014 NCN-NEEDS Summer School: Spintronics - Science, Circuits, and Systems

   Courses|' 11 Jun 2014

   The goal is to provide students with an understanding of how effects at the nanoscale can be exploited in novel devices and to provide a glimpse at the new applications that are possible.

   https://nanohub.org/courses/ss2014