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ECE 606 L6.1: Electron Tunneling - Transfer Matrix Method
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.2: Electron Tunneling - Tunneling Through a Single Barrier
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.3: Electron Tunneling - Tunneling Through a Double Barrier Structure
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.4: Electron Tunneling - Tunneling Through N Barriers - Formation of Bandstructure
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.5: Electron Tunneling - Analytical and Numerical Solution Strategies
Online Presentations | 20 Jul 2023 | Contributor(s):: Gerhard Klimeck
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Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
Online Presentations | 08 Mar 2019 | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
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Modeling of Inter-ribbon Tunneling in Graphene
Online Presentations | 11 Nov 2016 | Contributor(s):: Maarten Van de Put, William Gerard Hubert Vandenberghe, Massimo V Fischetti
IWCE presentation. In this paper we investigate the finite-size effect in nano-scaled graphene flakes. Improving on the bulk description, and because the structures are – atomistically speaking – large in size, we use the empirical pseudopotential method[2].
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NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool: From Basic Physics to Real Devices and to Global Impact on nanoHUB.org
Online Presentations | 10 Nov 2016 | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
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Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
Online Presentations | 22 Sep 2016 | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
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NEMO5, a Parallel, Multiscale, Multiphysics Nanoelectronics Modeling Tool
Online Presentations | 19 Sep 2016 | Contributor(s):: Gerhard Klimeck
The Nanoelectronic Modeling tool suite NEMO5 is aimed to comprehend the critical multi-scale, multi-physics phenomena and deliver results to engineers, scientists, and students through efficient computational approaches. NEMO5’s general software framework easily includes any kind of...
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E304 L6.2.2: Nanoelectrics - Tunneling
Online Presentations | 04 May 2016 | Contributor(s):: ASSIST ERC
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Atomistic Modeling of Nano Devices: From Qubits to Transistors
Online Presentations | 13 Apr 2016 | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
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Tunnel FETs - Device Physics and Realizations
Online Presentations | 10 Jul 2013 | Contributor(s):: Joachim Knoch
Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source contact will be elaborated on.
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Uniform Methodology of Benchmarking Beyond-CMOS Devices
Online Presentations | 31 Oct 2012 | Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...
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NEMO5 Tutorial 6B: Device Simulation - Quantum Transport in GaSb/InAs Tunneling FET
Online Presentations | 16 Jul 2012 | Contributor(s):: Yu He
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Outdoing Maxwell’s Demon: Taming Molecular Wildness
Online Presentations | 11 May 2011 | Contributor(s):: Dudley R. Herschbach
This talk describes these developments, illustrating means to analyze and control molecular trajectories and spatial orientation and to select rotational and vibrational states, with applications to elucidating chemical reaction dynamics.
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Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes
Online Presentations | 29 Mar 2011 | Contributor(s):: Gerhard Klimeck
Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...
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Tutorial 4c: Formation of Bandstructure in Finite Superlattices (Exercise Session)
Online Presentations | 29 Mar 2011 | Contributor(s):: Gerhard Klimeck
How does bandstructure occur? How large does a repeated system have to be? How does a finite superlattice compare to an infinite superlattice?
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Tutorial 4d: Formation of Bandstructure in Finite Superlattices (Exercise Demo)
Online Presentations | 29 Mar 2011 | Contributor(s):: Gerhard Klimeck
Demonstration of thePiece-Wise Constant Potential Barriers Tool.
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Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
Online Presentations | 16 Dec 2010 | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...