how to define work function & doping conc. in TMD FET
I am working on TMDFET specially on MoS2 , I have some questions
1) how do i define the doping in source & drain in input script file?
2) how do i define different work function in input script file?
3) for Vds > 0.45 V simulation , getting errors?
For 2nd question, i am defining the work function in python script as follow-
top_gate.workf = 5.1ev
but with above command, there is no change in result.
for 3rd question, for vds > 0.45V, i am getting simulation error i.e. the error is
Segmentation Fault(core dumped)