Chapter 1: A Primer MOSCap Tool on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s): Abdussamad Ahmed Muntahi, Shaikh S. Ahmed
The primary reason to study MOS (metal-oxide-semiconductor) capacitors is to understand the principle of operation as well as become familiar with some of the routinely used characterization techniques for MOS field effect transistors (MOSFETs). The MOSCap tool on nanoHUB.org simulates the...
Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s): Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
Monte Carlo HEMT Simulator
Tools | 12 Nov 2021 | Contributor(s): Shaikh S. Ahmed, Mohammad Zunaidur Rashid, Khadija Abul Khair
Simulates the current-voltage (I-V) and related characteristics of a nitride-based HEMT device using the 3-D particle-based Monte Carlo approach.
Monte Carlo Phonon Transport Simulator
Tools | 30 Aug 2017 | Contributor(s): Mohammad Zunaidur Rashid, Sasi Sekaran Sundaresan, Shaikh S. Ahmed
Calculates thermal conductivity of semiconductors by solving the Boltzmann transport equation via particle-based Monte Carlo method
GaN/InGaN/GaN Disk-in-Wire Light Emitters: Polar vs. Nonpolar Orientations
Online Presentations | 24 Nov 2015 | Contributor(s): Rezaul Karim Nishat, S. Alqahtani, Ye Wu, Vinay Uday Chimalgi, Shaikh S. Ahmed
IWCE 2015 presentation. in this paper, we computationally evaluate and compare the performance of recently reported in0.75n/gan disk-in-wire light emitting diodes (led) grown in the polar (c-plane) and nonpolar (m-plane) crystallographic orientations in terms of built-in fields, electronic...
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MOSCap Tool on nanoHUB.org
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Primer on the MOSFET Simulator on nanoHUB.org
The MOSFET simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V ) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field efect transistors. In this chapter, we will describe: i) the structure...
Top 2 shown