Self-Heating Effects in Nano-Scale Devices. What do we know so far ...
10 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation contains the research findings related to self-heating effects in nano-scale devices in silicon on insulator devices obtained at Arizona State University. Different device technologies and different device geometries are being examined. Details of the theoretical model used in...
Exercise for MESFET: Simulation Exercise
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This simulation exercise is designed to illustrate the operation of a MESFET device for different doping of the active region.
Exercise for MESFET: Theoretical Exercises
These theoretical exercises should help the student in understanding the operation of a MESFET device.
Exercise for MOSFET Lab: DIBL Effect
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.
Exercise for MOS Capacitors: CV curves and interface and Oxide Charges
This exercise is designed to teach the students how the CV curves of an ideal MOS Capacitor change in the presence of oxide or interface charges.
MOSCAP: Theoretical Exercise - High Frequency CV Curves
07 Jul 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
One is required to sketch the high frequency CV curves for different MOS Capacitors configurations.
BJT Lab: h-Parameters Calculation Exercise
07 Jul 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to obtain the appropriate input and output parameters to extract the small signal h-parameters in common-base configuration. Afterwards they need to derive the h-parameters in common-emitter configuration in terms of the h-parameters in the common base...
Introductory Concepts for Understanding Semiconductor Device Operation
30 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of lecture notes introduces the students to basic concepts needed for understanding semiconductor device operation.
PCPBT: Problem Assignment for Asymmetric Barriers
24 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This example demonstrates to the students that for non-symmetric barriers which arise due to the imperfection of the molecular beam epitaxy process there is a reduction in the transmission coefficient and therefore current.
BJT Lab: Theoretical Exercises
These two theoretical exercises are designed for the purpose of teaching the students the contribution of different current components for various modes of BJT transistor operation and also to understand how to examine and extract important BJT parameters from the device output characteristics.
PN Junction Lab Exercise: Short vs. Long Diode
This exercise examines the behavior of short vs. long diodes.
PN Junction Lab Exercise: Non-Idealities in a PN Diode
This exercise explores the behavior of a non-ideal diode in which the generation-recombination mechanisms in the depletion region, high levels of injection, and series resistance effects can significantly affect the diode behavior.
PCPBT Exercise - Symmetric Barriers
23 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise explores the nature of the quasi-bound states in a symmetric double barrier structure and how the broadening and the position of the quasi-bound states varies with the hidth and the height of the barriers.
Theory of PN Diodes
23 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of slides is intended to explain the operation of a PN diode to students.
Assembly for Nanotechnology Survey Courses
05 Nov 2008 | Tools | Contributor(s): Gerhard Klimeck, Dragica Vasileska
Educational Tools for Classroom and Homework use to introduce nanotechnology concepts
a TCAD Lab
29 Oct 2008 | Tools | Contributor(s): Gerhard Klimeck, Dragica Vasileska
An Assembly of TCAD tools for circuit, device, and process simulation
Quantum and Thermal Effects in Nanoscale Devices
4.5 out of 5 stars
18 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
To investigate lattice heating within a Monte Carlo device simulation framework, we simultaneously solve the Boltzmann transport equation for the electrons, the 2D Poisson equation to get the self-consistent fields and the hydrodynamic equations for acoustic and optical phonons. The phonon...
Nanotechnology: Yesterday, Today and Tomorrow
0.0 out of 5 stars
01 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska
This presentation illustrates the development of nanotechnology from the birth of the transistor up to today and it also speculates what is going to happen in the future.
Is dual gate device structure better from a thermal perspective?
5.0 out of 5 stars
01 Sep 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Stephen M. Goodnick
This presentation illustrates several points. First, it is shown that in nanoscale devices there is less degradation due to heating effects due to non-stationary nature of the carrier transport (velocity overshoot) in the device, which, in turn, makes less probable the interaction with phonons....
Homework Assignment for Bulk Monte Carlo Lab: Temperature Dependence of the Low Field Mobility for [100] Orientation
21 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
User needs to calculate and compare with experiments the temperature dependence of the low-field electron mobility in Si.
Homework Assignment for Bulk Monte Carlo Lab: Velocity vs. Field for Arbitrary Crystallographic Orientations
User needs to calculate and compare to experiment the velocity field characteristics for electrons in Si for different crystalographic directions and 77K and 300K temperatures.
Cosine Bands: an Exercise for PCPBT
21 Aug 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck, Dragica Vasileska
This exercise demonstrates the formation of cosine bands as we increase the number of wells in the n-well structure.
Bulk Monte Carlo Lab:Scattering Rates for Parabolic vs. Non-Parabolic Bands: an Exercise
20 Aug 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise helps the students learn the importance of the non-parabolic band approximation for large carrier energies.
Homework Assignment for Bulk Monte Carlo Lab: Arbitrary Crystallographic Direction
This exercise teaches the users how the average carrier velocity, average carrier energy and vally occupation change with the application of the electric field in arbitrary crystalographic direction