SDMS L4.04: Generation-Recombination Mechanisms Modeling
09 Oct 2023 | Presentation Materials | Contributor(s): Dragica Vasileska
Modeling Coulomb Effects in Nanoscale Devices
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26 Apr 2008 | Online Presentations | Contributor(s): Dragica Vasileska, Shaikh S. Ahmed, David K. Ferry
We describe the development of the modeling efforts focused towards proper description of the threshold voltage fluctuations due to the discrete impurity effects (different number and different distribution of the impurities from device to device on the same chip).NSF, ONRW. J. Gross, D....
ACUTE Exercise: Scattering Rates
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20 Jul 2010 | Teaching Materials | Contributor(s): Dragica Vasileska
The objective of this exercise is to examine first the non-elasticity of the acoustic phonon scattering. Then non-parabolicity of intervalley scattering is revisited and finally alloy disorder scattering has to be derived.
ABACUS: Test for PCPBT Lab
05 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have gone through the learning material, worked exercises and have completed the assignments and the...
Transport in a weak magnetic field
28 Jun 2011 | Teaching Materials | Contributor(s): Dragica Vasileska
This set of handwritten notes is part of the Semiconductor Transport class.
PCPBT: Problem Assignment for Asymmetric Barriers
24 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This example demonstrates to the students that for non-symmetric barriers which arise due to the imperfection of the molecular beam epitaxy process there is a reduction in the transmission coefficient and therefore current.
Test for Abacus
13 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This test checks preparedness of students in semiconductor device theory.
Verification of the Validity of the MOSCap Tool
10 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Numerical results for Surface Potential Vs Gate Bias are compared with analytical results to prove the validity of MOSCap Lab.
ABACUS: Test for Periodic Potential Lab
04 Aug 2010 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
Cosine Bands: an Exercise for PCPBT
21 Aug 2008 | Teaching Materials | Contributor(s): Gerhard Klimeck, Dragica Vasileska
This exercise demonstrates the formation of cosine bands as we increase the number of wells in the n-well structure.
Verification of the Validity of the Drift-Diffusion Lab Tool
Drift-Diffusion Lab results are verified analytically. In the first test minority carrier concentration is computed in a semiconductor slab with constant carrier Generation rate (/cm3.s). In the second test bias is applied across a semiconductor slab and current is computed both analytically and...
SDMS L4.03: Mobility Modeling
26 Sep 2023 | Presentation Materials | Contributor(s): Dragica Vasileska
Computational Electronics HW - Quamc 2D Lab Exercises
11 Jul 2008 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
www.eas.asu.edu/~vasileskNSF
ABACUS: Test for Carrier Statistics Tool
09 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
Drift Diffusion - Temperature Sensor
13 Aug 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck
The fact that mobility of a semiconductor varies with temperature is used to design a temperature sensor in this test.
High Field Transport
Limitations of the BTE
Schred: Solve a Challenge
20 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This is a challenge problem for Schred.
PCPBT Exercise - Symmetric Barriers
23 Jun 2009 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck
This exercise explores the nature of the quasi-bound states in a symmetric double barrier structure and how the broadening and the position of the quasi-bound states varies with the hidth and the height of the barriers.
Carrier Statistics - Temperature Effects
Silicon (Si), Germanium (Ge) and Gallium-Arsenide (GaAs) are commonly used materials for MOS Field Effect Transistor (MOSFET) fabrication. MOSFET structures are commonly doped to achieve the desired switching operation and doping is a critical parameter in MOSFET designing.The goal in this test...
Diffusion-Reaction Modeling of Cu Migration in CdTe Solar Devices
26 Oct 2015 | Online Presentations | Contributor(s): Da GUO, Tian Fang, Richard Akis, Dragica Vasileska
IWCE 2015 presentation. In this work, we report on development of one-dimensional (1D) finite-difference and two- dimensional (2D) finite-element diffusion-reaction simulators to investigate mechanisms behind Cu- related metastabilities observed in CdTe solar cells [1]. The evolution of CdTe...
SDMS L4.02: Silvaco Syntax, Part 2
Introductory Comments for Confined Carriers
These handwritten notes give introductory notes for confined carriers and are part of the Semiconductor Transport class.
Orthogonal Polynomials and Conductivity
Cu in CdTe Lab
22 Oct 2014 | Tools | Contributor(s): Da GUO, Dragica Vasileska
1-D reaction diffusion simulation of Cu's migration in CdTe solar cells