Ambipolar Virtual Source Compact Model for Graphene FETs

2014-10-23 18:47:56 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).

CCAM Compact Carbon Nanotube Field-Effect Transistor Model

2022-05-16 23:39:34 | Compact Models | Contributor(s): Michael Schroter, Manojkumar Annamalai, Max Haferlach, Martin Claus | doi:10.21981/5E9F-2S90

CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.

CNRS - Carbon Nanotube Interconnect RC Model

2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are modeled in Verilog-A.

Compact Model Vortex-STNO

2022-11-17 15:52:11 | Compact Models | Contributor(s): Sonal Shreya, Farshad Moradi | doi:10.21981/EC5D-JZ92

we present a Verilog-A-based analytical model of a vortex spin-torque nano oscillator (V-STNO) for enabling circuit-level simulation. The model presented here is functional for both linear and nonlinear dynamics of the magnetic vortex core.

FET pH Sensor Model

2015-06-04 14:39:01 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.

Florida Ferroelectric Tunnel Junction Device Model

2020-10-02 02:40:45 | Compact Models | Contributor(s): Tong Wu, Jing Guo | doi:10.21981/6TFD-GW48

A compact model of the Ferroelectric Tunnel Junctions (FTJs) device is constructed, using the Wentzel–Kramers–Brillouin (WKB) approximation for tunneling current calculation.

mCell Model

2015-01-20 00:40:32 | Compact Models | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.

MIT TFET compact model including the impacts of non-idealities

2017-05-08 02:34:24 | Compact Models | Contributor(s): Redwan Noor Sajjad, Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3XW47X6W

We present a compact model for tunnel FET that for the first time fits experimental transfer and output characteristics including the impact of non-idealities such as trap assisted tunneling and intrinsic band steepness.

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

2015-08-31 13:49:15 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

2014-10-23 18:43:25 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

Multi-walled/Single-walled Carbon Nanotube (MWCNT/SWCNT) Interconnect Lumped Compact Model Considering Defects, Contact resistance and Doping impact

2018-07-18 16:10:04 | Compact Models | Contributor(s): Rongmei Chen, Jie LIANG, Jaehyun Lee, Vihar Georgiev, Aida Todri | doi:10.4231/D3183448N

In this project, we present SWCNT and MWCNT interconnect compact models. These models consider the impact of CNT defects, the chirality and contact resistance between CNT-electrode (Pd) on CNT interconnect performances and power consumption. Variabilities

MVS III-V HEMT model

2015-12-01 16:40:24 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.

MVS Nanotransistor Model (Silicon)

2015-12-02 17:03:59 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.

Notre Dame TFET Model

2017-09-01 17:35:14 | Compact Models | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3CF9J852

Notre Dame TFET compact model version 2.1.0.

Optical Ring Modulator ModSpec Compact Model

2017-01-05 16:54:03 | Compact Models | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D31N7XN9P

The optical ring modulator presented here is a vertical junction resonant microring/disk modulator which can achieve high modulation speed, lower power consumption and compact size. A Matlab-based ModSpec compact model is developed and simulated.

Peking University Analog-Switching Resistive Random Access Memory (RRAM) Verilog-A model

2021-02-02 02:43:58 | Compact Models | Contributor(s): Lixia Han, Linlin Cai, Jinfeng Kang, Xiaoyan Liu, Peng Huang | doi:10.21981/MRFT-C373

The Peking University Analog-switching RRAM physical model can capture the pulse conductance updates of analog RRAM devices rapidly and accurately. The model is described by Verilog-A and can be embedded in SPICE and Cadence for circuit simulations.

Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.

PSPHV LDMOS

2021-11-24 14:32:19 | Compact Models | Contributor(s): Colin McAndrew, kejun xia | doi:10.21981/93B1-9539

This is an update to version 1.0.6 of the PSPHV LDMOS model (an enhanced PSP103.6 model for the core MOS transistor, an updated JFETIDG model for the drift region, JUNCAP2 for the pn-junction diodes, PSP MOS for gate-drain overlap capacitance.

Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

2014-10-23 20:13:09 | Compact Models | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.

Purdue Solar Cell Model (PSM) - CIGS/CdTe

2018-04-16 18:09:56 | Compact Models | Contributor(s): Xingshu Sun, Sourabh Dongaonkar, Raghu Vamsi Krishna Chavali, Suhas Venkat Baddela, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3NC5SD6H

Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for CIGS/CdTe.