Publications: All

  1. compactmodel x
  1. Ambipolar Virtual Source Compact Model for Graphene FETs

    2014-10-23 18:47:56 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3MS3K273

    This is a compact physics-based ambipolar-virtual-source (AVS) model that describes carrier transport in both unipolar and ambipolar regimes in quasi-ballistic graphene field-effect transistors (GFETs).
  2. Berkeley VCSEL Compact Model

    2015-06-02 18:58:52 | Compact Models | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.
  3. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Compact Models | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  4. CNRS - Carbon Nanotube Interconnect RC Model

    2017-11-09 16:25:31 | Compact Models | Contributor(s): Jie LIANG, Aida Todri | doi:10.4231/D3SJ19T14

    This CNT Interconnect Compact Model includes a solid physics understanding and electrical modeling for pristine and doped SWCNT as Interconnect applications. SWCNT resistance and capacitance are modeled in Verilog-A.
  5. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    2018-04-16 17:57:57 | Compact Models | Contributor(s): You WANG, Yue ZHANG, Weisheng Zhao, Jacques-Olivier Klein, Dafiné Ravelosona, Hao Cai, Lirida Naviner

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.
  6. Double-Clamped Silicon NEMS Resonators Model

    2016-03-07 16:45:06 | Compact Models | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

    This model is built for a silicon-based, double-clamped (source and drain), double-gate beam. The model takes into account capacitive modulation with the two gates, piezoresistive modulation through the beam and electrical parasitic elements.
  7. FET pH Sensor Model

    2015-06-04 14:39:01 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
  8. III-V Tunnel FET Model

    2015-04-21 13:49:00 | Compact Models | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
  9. mCell Model

    2015-01-20 00:40:32 | Compact Models | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
  10. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    2015-08-31 13:49:15 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
  11. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    2014-10-23 18:43:25 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.
  12. MVS III-V HEMT model

    2015-12-01 16:40:24 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
  13. MVS Nanotransistor Model

    2015-12-01 15:13:44 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  14. MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  15. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    2014-10-23 20:13:09 | Compact Models | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
  16. Purdue Solar Cell Model (PSM) - CIGS/CdTe

    2018-04-16 18:09:56 | Compact Models | Contributor(s): Xingshu Sun, Sourabh Dongaonkar, Raghu Vamsi Krishna Chavali, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3NC5SD6H

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for CIGS/CdTe.
  17. Purdue Solar Cell Model (PSM) - HIT

    2018-04-16 18:09:10 | Compact Models | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3CV4BS80

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.
  18. Purdue Solar Cell Model (PSM) - Perovskite/a-Si (p-i-n)

    2018-04-16 17:56:34 | Compact Models | Contributor(s): Xingshu Sun, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Mark Lundstrom, Muhammad Ashraful Alam | doi:10.4231/D3862BC8C

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for perovskite and a-Si solar cells.
  19. Purdue Solar Cell Model (PSM) - Si

    2018-04-16 18:09:34 | Compact Models | Contributor(s): Mark Lundstrom, Muhammad Ashraful Alam, Raghu Vamsi Krishna Chavali, Sourabh Dongaonkar, Suhas Venkat Baddela, Xingshu Sun | doi:10.4231/D3HM52M18

    Purdue Solar Cell Model (PSM), previously known as the TAG (technology agnostic) model, is a suite of compact models developed for solar cells of c-Si, a-Si, perovskites, CIGS, CdTe, and HIT. This package is for c-Si solar cells.
  20. R3

    2014-11-21 15:20:44 | Compact Models | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.