Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0
This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
Listed in Compact Models | publication by group NEEDS: New Era Electronic Devices and Systems
Additional materials available
Version 1.0.0 - published on 23 Oct 2014 doi:10.4231/D33R0PV04 - cite this
Licensed under NEEDS Modified CMC License according to these terms
Description
This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
Model Release Components ( Show bundle contents ) Bundle
- Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0 Verilog-A(VA | 7 KB)
- Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0 Benchmarks(ZIP | 300 KB)
- Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0 Parameters(SP | 810 B )
- Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0 Manual(PDF | 360 KB)
- Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model 1.0.0 Parameter Extractor(ZIP | 5 KB)
- License terms
Key References
[1] D. Datta, B. Behin-Aein, S. Datta, and S. Salahuddin, "Voltage asymmetry of spin-transfer torques," IEEE Trans. Nanotechnology, vol. 11, no. 2, pp. 261–272, Mar. 2012.
[2] G. Panagopoulos, C. Augustine, and K. Roy, "A framework for simulating hybrid MTJ/CMOS circuits: atoms to systems approach," in Proc. of IEEE Design and Test in Europe (DATE), Apr. 2012, pp. 1443–1446.
[3] X. Fong et al., "KNACK: a hybrid spin-charge mixed-mode simulator for evaluating different genres of STT-MRAMs," in Proc. of IEEE Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), Sep. 2011, pp. 51–54.
[4] [Online] OOMMF. Available: "http://math.nist.gov/oommf".
[5] S. Yuasa et al., "Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions," Nature Materials, vol. 3, iss. 12, pp. 868–871, Dec. 2004.
[6] C. J. Lin et al., "45nm low power CMOS logic compatible embedded STT MRAM utilizing a reverse-connection 1T/1MTJ cell," in Proc. of IEEE Int. Electron Devices Meeting (IEDM), Dec. 2009, pp. 11.6.1–11.6.4.
Cite this work
Researchers should cite this work as follows:
- Fong, X.; Choday, S. H.; Georgios, P.; Augustine, C.; Roy, K. (2014). Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model. nanoHUB. doi:10.4231/D33R0PV04
Tags
NEEDS: New Era Electronic Devices and Systems
This publication belongs to the NEEDS: New Era Electronic Devices and Systems group.