On Monday July 6th, the nanoHUB will be intermittently unavailable due to scheduled maintenance. All tool sessions will be shut down early in the morning. Home directories and tools will be unavailable most of the day. We apologize for any inconvenience this may cause. close

Support

Support Options

Submit a Support Ticket

 

Publications: Compact Models

  1. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    Jun 15, 2015 | Contributor(s): michael schroter, Max Haferlach, Martin Claus | doi:10.4231/D34F1MK28

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  2. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    Jun 14, 2015 | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.
  3. Berkeley VCSEL Compact Model

    May 28, 2015 | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.
  4. General and Junction Primitives for Verilog-A Compact Models

    Apr 30, 2015 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

    Useful macros and analog function building blocks for compact models.
  5. UCSB Graphene Nanoribbon Interconnect Compact Model

    Apr 21, 2015 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19

    UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.
  6. III-V Tunnel FET Model

    Apr 20, 2015 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
  7. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    Apr 08, 2015 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
  8. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    Mar 25, 2015 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
  9. Universal TFET model

    Jan 23, 2015 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H

    A universal TFET compact model implemented in verilog-A
  10. mCell Model

    Jan 19, 2015 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
  11. R3

    Nov 21, 2014 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
  12. FET pH Sensor Model

    Nov 03, 2014 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
  13. Spin Switch Model

    Oct 23, 2014 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
  14. MVS Nanotransistor Model (Silicon)

    Oct 23, 2014 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3H12V82S

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  15. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    Oct 23, 2014 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.
  16. Purdue Nanoelectronics Research Laboratory Magnetic Tunnel Junction Model

    Oct 23, 2014 | Contributor(s): Xuanyao Fong, Sri Harsha Choday, Panagopoulos Georgios, Charles Augustine, Kaushik Roy | doi:10.4231/D33R0PV04

    This is the Verilog-A model of the magnetic tunnel junction developed by the Nanoelectronics Research Laboratory at Purdue University.
  17. TAG Solar Cell Model (p-i-n thin film)

    Oct 23, 2014 | Contributor(s): Sourabh Dongaonkar, Xingshu Sun, Mark Lundstrom, Muhammad A. Alam | doi:10.4231/D3V97ZS4G

    The TAG solar cell model is a physics-based compact model for p-i-n thin film solar cells that can be used for panel level simulations.
  18. Stanford 2D Semiconductor (S2DS) Transistor Model

    Oct 22, 2014 | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3QJ78004

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
  19. Released Resonant Body Transistor (RBT) Model

    Oct 22, 2014 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3KS6J55W

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. The model is aimed to present a deep insight into the physics of the RBT.
  20. MIT Virtual Source GaNFET-RF ( MVSG-RF) Model

    Oct 22, 2014 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3G15TC12

    The MVS-G-RF GaN HEMT model is a self-consistent transport/capacitance model for scaled GaN HEMT devices used in RF applications.

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.