Publications: All

  1. Nano Education Resources

    2016-06-02 21:17:31 | Datasets | Contributor(s): Quinn Spadola, Lisa Friedersdorf | doi:10.4231/D3C824G00

    This is a database of nanoeducation resources that can be searched, filtered, and sorted. Resources are listed by topic area, grade level, core discipline, STEM content area, and resource type.
  2. Compact Model of Dielectric Breakdown in Spin Transfer Torque Magnetic Tunnel Junction

    2016-08-17 03:10:01 | Compact Models | Contributor(s): You Wang, Yue Zhang, Weisheng Zhao, Yahya Lakys, Dafine Ravelosona, Jacques-Olivier Klein, Claude Chappert | doi:10.4231/D36688K7D

    Spin Transfer Torque Magnetic Tunnel Junction (STT-MTJ) is a promising candidate for non-volatile memories thanks to its high speed, low power, infinite endurance and easy integration with CMOS circuits. However, a relatively high current flowing through MTJ is always...

  3. Flexible Transition Metal Dichalcogenide Field-Effect Transistor (TMDFET) Model

    2016-05-04 03:37:43 | Compact Models | Contributor(s): Morteza Gholipour, Deming Chen | doi:10.4231/D3TM72243

    Verilog-A model of flexible transition metal dichalcogenide field-effect transistors (TMDFETs), considering effects when scaling the transistor size down to the 16-nm technology node. This model can be used for circuit-level simulations.

  4. Physics-Based Compact Model for Dual-Gate Bilayer Graphene FETs

    2016-04-07 19:19:34 | Compact Models | Contributor(s): Jorge-Daniel Aguirre Morales, Sébastien Frégonèse, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer | doi:10.4231/D30C4SM1H

    A compact model for simulation of Dual-Gate Bilayer Graphene FETs based on physical equations.
  5. A Verilog-A Compact Model for Negative Capacitance FET

    2016-04-08 00:20:11 | Compact Models | Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam | doi:10.4231/D3PV6B79V

    The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to design NC-FET for high speed and low power...
  6. Stanford 2D Semiconductor (S2DS) Transistor Model

    2016-04-05 01:09:39 | Compact Models | Contributor(s): Saurabh Vinayak Suryavanshi, Eric Pop | doi:10.4231/D3ZC7RV9X

    The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
  7. Database of The Big Ideas in Nanoscale Science and Engineering (NSTA)

    2016-03-25 20:23:57 | Datasets | Contributor(s): Tanya Faltens | doi:10.4231/D3HH6C69T

    This database lists the 9 Big Ideas of Nanoscale Science and Engineering along with the Learning Goals associated with each Big Idea. Instructors should refer to the NSTA publication, "The Big Ideas of Nanoscale Science & Engineering, A Guidebook for Secondary Teachers" (c) 2009 NSTA Press (156...
  8. Double-Clamped Silicon NEMS Resonators Model

    2016-03-07 16:45:06 | Compact Models | Contributor(s): Yanfei Shen, Scott Calvert, Jeffrey F. Rhoads, Saeed Mohammadi | doi:10.4231/D37659G7N

    Micro/Nanoelectromechanical systems (M/NEMS) are gaining great momentum and interest in a variety of
    applications, such as high-sensitivity mass sensing, tunable signal filtering and precision timing. They possess
    inherently high quality factors and can provide narrow bandwidth...

  9. NISE Net NanoDays Kit Database

    2016-01-22 21:38:38 | Datasets | Contributor(s): Tanya Faltens

    This is a database of NISE Net NanoDays Kits, with links to information about the kits and instructional videos. This database was created in 2014 and there may be some additional content added since then. This database contains all the...
  10. MVS Nanotransistor Model (Silicon)

    2015-12-02 17:03:59 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3RR1PN6M

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  11. MVS III-V HEMT model

    2015-12-01 16:40:24 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
  12. MVS Nanotransistor Model

    2015-12-01 15:13:44 | Compact Models | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  13. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    2015-10-07 14:56:43 | Compact Models | Contributor(s): Michael Schroter, Max Haferlach, Martin Claus | doi:10.4231/D3VD6P595

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  14. Non-Faradaic Impedance-based Biosensor Model

    2015-09-26 14:54:22 | Compact Models | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D3PR7MV7M

    The non-Faradaic impedance model is a physics-based compact model that describes the small-signal operation of a sensor that relies on electrochemical detection of analyte molecules.
  15. Optical Ring Filter (ORF) Modspec Compact Model

    2015-09-24 18:35:26 | Compact Models | Contributor(s): Lily Weng, Tianshi Wang | doi:10.4231/D3125QB06

    The MIT ORF Modspec Compact Model provides a compact model of an optical ring filter on Model and Algorithm Prototyping Platform. It describes transmission behavior of the filter when operating with several hundreds terahertz light signals.
  16. Thermoelectric Device Compact Model

    2015-09-02 20:47:53 | Compact Models | Contributor(s): Xufeng Wang, Kyle Conrad, Jesse Maassen, Mark Lundstrom | doi:10.4231/D3TH8BP0W

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
  17. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    2015-08-31 00:00:00 | Compact Models | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3VH5CK04

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible compact model for fast analysis of RBTs.
  18. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    2015-08-31 13:49:15 | Compact Models | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
  19. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    2015-11-09 15:06:34 | Compact Models | Contributor(s): You WANG, Yue ZHANG, Jacques-Olivier Klein, Thibaut Devolder, Dafiné Ravelosona, Claude Chappert, Weisheng Zhao | doi:10.4231/D3154DQ21

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex hybrid circuits before fabrication.
  20. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    2015-06-16 12:26:13 | Compact Models | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.