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Publications: Compact Models

  1. Thermoelectric Device Compact Model

    Sep 01, 2015 | Contributor(s): Xufeng Wang, Kyle Conrad, Jesse Maassen, Mark Lundstrom | doi:10.4231/D3TH8BP0W

    The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
  2. Released Resonant Body Transistor with MIT Virtual Source (RBT-MVS) Model

    Aug 30, 2015 | Contributor(s): Bichoy W. Bahr, Dana Weinstein, Luca Daniel | doi:10.4231/D3VH5CK04

    An RBT is a micro-electromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fully-featured spice-compatible compact model for fast analysis of RBTs.
  3. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    Aug 29, 2015 | Contributor(s): Ujwal Radhakrishna, Dimitri Antoniadis | doi:10.4231/D3086365H

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.
  4. MVS Nanotransistor Model

    Aug 21, 2015 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3416T10C

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  5. MVS III-V HEMT model

    Aug 21, 2015 | Contributor(s): Shaloo Rakheja | doi:10.4231/D37S7HT39

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters. This model is designed for HEMT.
  6. MVS Nanotransistor Model (Silicon)

    Aug 01, 2015 | Contributor(s): Shaloo Rakheja, Dimitri Antoniadis | doi:10.4231/D3QZ22J40

    The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
  7. CCAM Compact Carbon Nanotube Field-Effect Transistor Model

    Jun 15, 2015 | Contributor(s): michael schroter, Max Haferlach, Martin Claus | doi:10.4231/D34F1MK28

    CCAM is a semi-physical carbon nanotube field-effect transistor model applicable for digital, analog and high frequency applications.
  8. Verilog-A implementation of the compact model for organic thin-film transistors oTFT

    Jun 14, 2015 | Contributor(s): Ognian Marinov | doi:10.4231/D3R785Q3B

    Compact model oTFT supports mobility bias enhancement, contact effects, channel modulation and leakage in organic thin-film transistors. Version 2.04.01 “mirrors” TFT in all regimes of operation by DC, AC and transient simulations.
  9. Berkeley VCSEL Compact Model

    May 28, 2015 | Contributor(s): Adair Gerke, Connie J. Chang-Hasnain | doi:10.4231/D3T43J40H

    The U.C. Berkeley Vertical Cavity Surface Emitting Laser (VCSEL) Compact Model provides a circuit simulator compatible Verilog-A model of VCSEL lasers, primarily for use in designing direct-modulation driver circuits for optical interconnects.
  10. General and Junction Primitives for Verilog-A Compact Models

    Apr 30, 2015 | Contributor(s): Colin McAndrew, Geoffrey Coram | doi:10.4231/D3G15TC2J

    Useful macros and analog function building blocks for compact models.
  11. UCSB Graphene Nanoribbon Interconnect Compact Model

    Apr 21, 2015 | Contributor(s): Junkai Jiang, Wei Cao, Kaustav Banerjee | doi:10.4231/D34Q7QR19

    UCSB GNR interconnect model is based on a distributed RLC circuit, in which carrier mean free path, graphene doping concentration (Fermi level) and number of layers are considered. The model was originally published by UCSB NRL group.
  12. III-V Tunnel FET Model

    Apr 20, 2015 | Contributor(s): Huichu Liu, Vinay Saripalli, Vijaykrishnan Narayanan, Suman Datta | doi:10.4231/D30Z70X8D

    The III-V Tunnel FET Model is a look-up table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
  13. Stanford Virtual-Source Carbon Nanotube Field-Effect Transistors Model

    Apr 08, 2015 | Contributor(s): Chi-Shuen Lee, H.-S. Philip Wong | doi:10.4231/D3BK16Q68

    The VSCNFET model captures the dimensional scaling properties and includes parasitic resistance, capacitance, and tunneling leakage currents. The model aims for CNFET technology assessment for the sub-10-nm technology nodes.
  14. UCSB 2D Transition-Metal-Dichalcogenide (TMD) FET model

    Mar 25, 2015 | Contributor(s): Wei Cao, Kaustav Banerjee | doi:10.4231/D37940V7H

    a compact model for 2D TMD FET considering the effect of mobility degradation, interface traps, and insufficient doping in the source/drain extension regions
  15. Universal TFET model

    Jan 23, 2015 | Contributor(s): Hao Lu, Trond Ytterdal, Alan Seabaugh | doi:10.4231/D3901ZG9H

    A universal TFET compact model implemented in verilog-A
  16. mCell Model

    Jan 19, 2015 | Contributor(s): David M. Bromberg, Daniel H. Morris | doi:10.4231/D3CR5ND3Q

    This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a magnetic tunnel junction between stable states.
  17. R3

    Nov 21, 2014 | Contributor(s): Colin McAndrew | doi:10.4231/D3QB9V64G

    Compact model for polysilicon (poly) resistors, 3-terminal JFETs, and diffused resistors.
  18. FET pH Sensor Model

    Nov 03, 2014 | Contributor(s): Piyush Dak, Muhammad A. Alam | doi:10.4231/D30000150

    The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
  19. Spin Switch Model

    Oct 23, 2014 | Contributor(s): Samiran Ganguly, Kerem Yunus Camsari, Supriyo Datta | doi:10.4231/D3C824F8D

    We present a circuit/compact model for the Spin Switch created using a Verilog-A based library of "spintronic lego blocks" building upon previous works on spin transport.
  20. Stanford University Resistive-Switching Random Access Memory (RRAM) Verilog-A Model

    Oct 23, 2014 | Contributor(s): Zizhen Jiang, H.-S. Philip Wong | doi:10.4231/D37H1DN48

    The Stanford University RRAM Model is a SPICE-compatible compact model which describes switching performance for bipolar metal oxide RRAM.

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