You must login before you can run this tool.
PADRE is a 2D/3D simulator for electronic devices, such as MOSFET transistors. It can simulate physical structures of arbitrary geometry—including heterostructures—with arbitrary doping profiles, which can be obtained using analytical functions or directly from multidimensional process simulators such as Prophet.
For each electrical bias, PADRE solves a coupled set of partial differential equations (PDEs). A variety of PDE systems are supported which form a hierarchy of accuracy:
electrostatic (Poisson equation) drift-diffusion (including carrier continuity equations) energy balance (including carrier temperature) electrothermal (including lattice heating)
A variety of supplemental documents are available that deal with the PADRE software and TCAD simulation:
User Guide (HTML) Abbreviated First Time User Guide FAQ A set of course notes on Computational Electronics with detailed explanations on bandstructure, pseudopotentials, numerical issues, and drift diffusion. Introduction to DD Modeling with PADRE MOS Capacitors: Description and Semiclassical Simulation With PADRE
A Primer on Semiconductor Device Simulation (Seminar)
Additional developments were made in collaboration by the following:
|Steven Clark||rappture interface|
|Xufeng Wang||rappture interface|
|Gerhard Klimeck||interface and output requirements|
|Dragica Vasileska||sample inputs and output requirements|
Researchers should cite this work as follows: