Papers (1-5 of 5)

1. Device Physics and Simulation of Silicon Nanowire Transistors

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   20 May 2006 | | Contributor(s):: Jing Wang

   As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has attracted broad attention from both the semiconductor industry...

2. Exploring New Channel Materials for Nanoscale CMOS

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   21 May 2006 | | Contributor(s):: Anisur Rahman

   The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices.Novel process techniques, such as ALD, high-k dielectrics,...

3. Notes on the Ballistic MOSFET

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   08 Oct 2005 | | Contributor(s):: Mark Lundstrom

   When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...

4. Theory of Ballistic Nanotransistors

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   27 Nov 2002 | | Contributor(s):: Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom

   Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...

5. Towards Multi-Scale Modeling of Carbon Nanotube Transistors

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   20 Sep 2006 | | Contributor(s):: Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram

   Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...