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Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and...
ECE 612 Lecture 26: Heterostructure FETs
0.0 out of 5 stars
10 Dec 2008 | Online Presentations | Contributor(s): Mark Lundstrom
2) Heterojunction review,
3) Modulation doping,
4) I-V characteristics,
5) Device Structure / Materials,
ECE 612 Lecture 8: Scattering Theory of the MOSFET II
08 Oct 2008 | Online Presentations | Contributor(s): Mark Lundstrom
Outline: 1) Review and introduction,
2) Scattering theory of the MOSFET,
3) Transmission under low VDS,
4) Transmission under high VDS,
ECE 612 Lecture 7: Scattering Theory of the MOSFET I
Lecture 3A: The Ballistic MOSFET
10 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
The IV characteristic of the ballistic MOSFET is formally derived. When Boltzmann statistics are assumed, the model developed here reduces to the one presented in Lecture 2. There is no new...
Lecture 3B: The Ballistic MOSFET
This lecture is a continuation of part 3A. After discussion some bandstructure considerations, it describes how 2D and subthreshold electrostatics are included in the ballistic model.
Physics of Nanoscale Transistors: An Introduction to Electronics from the Bottom Up
Transistor scaling has pushed channel lengths to the nanometer regime, and advances in nanoscience have opened up many new possibilities for devices. To realize these opportunities, our...
Lecture 4: Scattering in Nanoscale MOSFETs
08 Sep 2008 | Online Presentations | Contributor(s): Mark Lundstrom
No MOSFET is ever fully ballistic - there is always some carrier scattering. Scattering makes the problem complicated and requires detailed numerical simulations to treat properly. My objective...
Lecture 5: Application to State-of-the-Art FETs
The previous lessons may seem a bit abstract and mathematical. To see how this all works, we examine measured data and show how the theory presented in the previous lessons help us understand the...
Physics of Nanoscale MOSFETs
3.5 out of 5 stars
26 Aug 2008 | Courses | Contributor(s): Mark Lundstrom
Transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to MOSFET device physics are less and less suitable This short course describes a way of...
Lecture 1: Review of MOSFET Fundamentals
4.0 out of 5 stars
26 Aug 2008 | Online Presentations | Contributor(s): Mark Lundstrom
A quick review of the traditional theory of the MOSFET along with a review of key device performance metrics. A short discussion of the limits of the traditional (drift-diffusion) approach and...
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
5.0 out of 5 stars
08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Nano Carbon: From ballistic transistors to atomic drumheads
14 May 2008 | Online Presentations | Contributor(s): Paul L. McEuen
Carbon takes many forms, from precious diamonds to lowly graphite. Surprisingly, it is the latter that is the most prized by nano physicists. Graphene, a single layer of graphite, can serve as an...
Can numerical “experiments” INSPIRE physical experiments?
20 Dec 2007 | Online Presentations | Contributor(s): Supriyo Datta
This presentation was one of 13 presentations in the one-day forum,
"Excellence in Computer Simulation," which brought together a broad
set of experts to reflect on the future of...
Reliability Physics of Nanoscale Transistors
27 Nov 2007 | Courses | Contributor(s): Muhammad A. Alam
This course is now offered on nanoHUB as ECE 695A Reliability Physics of Nanotransistors.
MCW07 Modeling Molecule-Assisted Transport in Nanotransistors
06 Nov 2007 | Online Presentations | Contributor(s): Kamil Walczak
Molecular electronics faces many problems in practical device implementation, due to difficulties with fabrication and gate-ability. In these devices, molecules act as the main conducting channel....
The Nano-MOSFET: A brief introduction
17 Aug 2007 | Online Presentations | Contributor(s): Mark Lundstrom
MOSFET channel lengths are now well below 100nm, and getting smaller,
but MOSFETs are still modeled and understood much as they were 30
years ago. Seminal work in the 1960’s laid the...
Introduction to FETToy
03 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the FETToy simulator. A brief introduction to FETToy is presented, followed by voiced presentations featuring the simulator in action. Upon...
Introduction to nanoMOS
02 Jul 2007 | Learning Modules | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to the nanoMOS simulator. A brief introduction to nanoMOS is presented, followed by voiced presentations featuring the simulator in action. Upon...