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On the Reliability of Micro-Electronic Devices: An Introductory Lecture on Negative Bias Temperature Instability
28 Sep 2005 | Online Presentations | Contributor(s): Muhammad Alam
In 1930s Bell Labs scientists chose to focus on Siand Ge, rather than better known semiconductors like Ag2S and Cu2S, mostly because of their reliable performance. Their choice was rewarded with the …
http://nanohub.org/resources/193
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Notes on the Ballistic MOSFET
08 Oct 2005 | Publications | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance …
http://nanohub.org/resources/489
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Simple Theory of the Ballistic MOSFET
11 Oct 2005 | Online Presentations | Contributor(s): Mark Lundstrom
Silicon nanoelectronics has become silicon nanoelectronics, but we still analyze, design, and think about MOSFETs in more or less in the same way that we did 30 years ago. In this talk, I will …
http://nanohub.org/resources/491
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Ballistic Nanotransistors
07 Dec 2005 | Learning Modules | Contributor(s): Mark Lundstrom
This learning module is an introduction to the theory ballistic nanotransistors. No transistor is fully ballistic, but analyzing nanotransistors by neglecting scattering processes provides new …
http://nanohub.org/resources/612
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Device Physics and Simulation of Silicon Nanowire Transistors
20 May 2006 | Publications | Contributor(s): Jing Wang
As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits, many novel device structures are being extensively explored. Among them, the …
http://nanohub.org/resources/1313