Papers (1-11 of 11)

1. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

   28 Jun 2013 | | Contributor(s):: raseong kim

   For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving breakthroughs in thermoelectrics, which have suffered from low efficiencies for decades. As the device scale...

2. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

   28 Jun 2013 | | Contributor(s):: Yang Liu

   As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are investigating alternative structures and materials, among which III-V compound semiconductor-based...

3. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

   28 Jun 2013 | | Contributor(s):: Himadri Pal

   III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can replace silicon (Si) in extremely scaled devices. The effect of low density-of-states of III-V materials...

4. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

   28 Jun 2013 | | Contributor(s):: Neophytos Neophytou

   As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for Semiconductors, (ITRS), structures will evolve from planar devices into devices that include 3D...

5. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

   28 Jun 2013 | | Contributor(s):: Siyu Koswatta

   Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...

6. Carbon Nanotube Electronics: Modeling, Physics, and Applications

   28 Jun 2013 | | Contributor(s):: Jing Guo

   In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport can be nearly ballistic across distances of several hundred nanometers. Deposition of high-k gate...

7. Nanoscale MOSFETS: Physics, Simulation and Design

   28 Jun 2013 | | Contributor(s):: Zhibin Ren

   This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

8. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

   28 Jun 2013 | | Contributor(s):: Carl R. Huster

   For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...

9. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

   28 Jun 2013 | | Contributor(s):: Kausar Banoo

   Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators can no longer be applied. On the other hand, the use of a better, more accurate Boltzmann Transport...

10. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | | Contributor(s):: Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards to the BJT, we will compare and assess the solutions of a physically detailed microscopic model to...

11. Landauer Approach to Thermoelectrics

    23 Jun 2013 | | Contributor(s):: Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...