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Tags: device physics

Resources (1-20 of 110)

  1. Intro to MOS-Capacitor Tool

    09 Jan 2013 | Tools | Contributor(s): Emmanuel Jose Ochoa, Stella Quinones

    Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential...

    http://nanohub.org/resources/mosctool

  2. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Papers | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  3. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  4. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  5. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Papers | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  6. Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices

    28 Jun 2013 | Papers | Contributor(s): Siyu Koswatta

    Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices...

    http://nanohub.org/resources/18707

  7. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Papers | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  8. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  9. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    http://nanohub.org/resources/18765

  10. Direct Solution of the Boltzmann Transport Equation in Nanoscale Si Devices

    28 Jun 2013 | Papers | Contributor(s): Kausar Banoo

    Predictive semiconductor device simulation faces a challenge these days. As devices are scaled to nanoscale lengths, the collision-dominated transport equations used in current device simulators...

    http://nanohub.org/resources/18767

  11. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  12. Landauer Approach to Thermoelectrics

    23 Jun 2013 | Papers | Contributor(s): Changwook Jeong

    Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent...

    http://nanohub.org/resources/18681

  13. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16122

  14. ECE 606 Lecture 26: The Future of Computational Electronics

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    Future Transistors and Single Atom Transistors; New Modeling Tools (NEMO); nanoHUB: Cloud Computing - Software as a Service

    http://nanohub.org/resources/16121

  15. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15976

  16. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15977

  17. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15978

  18. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15979

  19. ECE 606 Lecture 20: Heterojunction Bipolar Transistor

    17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15715

  20. ECE 606 Lecture 19: Bipolar Transistors Design

    17 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15714

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