All Categories (21-38 of 38)

1. ECE 606 Lecture 32: MOS Electrostatics I

   out of 5 stars 

   19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

2. ECE 606 Lecture 33: MOS Electrostatics II

   out of 5 stars 

   16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

3. ECE 612 Lecture 12: 2D Electrostatics

   out of 5 stars 

   28 Oct 2008 | | Contributor(s):: Mark Lundstrom

   Outline:1) Consequences of 2D electrostatics,2) 2D Poisson equation,3) Charge sharing model,4) Barrier lowering,5) 2D capacitor model,6) Geometric screening length,7) Discussion,8) Summary.

4. ECE 612 Lecture 14: VT Engineering

   out of 5 stars 

   28 Oct 2008 | | Contributor(s):: Mark Lundstrom

   Outline: 1) VT Specification,2) Uniform Doping,3) Delta-function doping, xC = 0,4) Delta-function doping, xC > 0,5) Stepwise uniform,6) Integral solution.The doping profiles in modern MOSFETs are complex. Our goal is to develop an intuitive understanding of how non-uniform doping profiles affect...

5. ECE 612 Lecture 1: 1D MOS Electrostatics I

   out of 5 stars 

   09 Sep 2008 | | Contributor(s):: Mark Lundstrom

   Outline: 1) Review of some fundamentals,2) Identify next steps.

6. ECE 612 Lecture 25: SOI Electrostatics

   out of 5 stars 

   08 Dec 2008 | | Contributor(s):: Mark Lundstrom

   Outline:1. Introduction,2. General solution, 3. VTF vs. VGB,4. Subthreshold slope,5. Double gate (DG) SOI,6. Recap,7. Discussion,8. Summary.

7. ECE 612 Lecture 2: 1D MOS Electrostatics II

   out of 5 stars 

   09 Sep 2008 | | Contributor(s):: Mark Lundstrom

   Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

8. Illinois ECE 440 Solid State Electronic Devices, Lecture 18: P-N Diode Electrostatics

   out of 5 stars 

   22 Oct 2009 | | Contributor(s):: Eric Pop

   Last time, we talked about p-n junction built-in voltage V¬0.Today: more about p-n electrostatics.

9. ME 597 Lecture 25: Using the AFM to Measure Electrostatic Forces

   out of 5 stars 

   02 Dec 2009 | | Contributor(s):: Ron Reifenberger

10. MSE 597G Lecture 5: Interatomic potentials II

    out of 5 stars 

    13 Nov 2008 | | Contributor(s):: Alejandro Strachan

    Embedded atom model for metals,Three body terms for semiconductors: Stillinger-Weber,Electrostatics and Covalent interactions.

11. nanoHUB-U: Essentials of MOSFETs

    Courses|' 28 Jan 2019

    This course develops a simple framework for understanding the essential physics of modern nanotransistors and also discusses important technology considerations and circuit applications.

    https://nanohub.org/courses/MOS

12. nanoHUB-U: Fundamentals of Nanoelectronics - Part A: Basic Concepts, 2nd Edition

    Courses|' 04 Dec 2014

    Basic Concepts presents key concepts in nanoelectronics and mesoscopic physics and relates them to the traditional view of electron flow in solids.

    https://nanohub.org/courses/FON1

13. nanoHUB-U: Fundamentals of Nanotransistors, 2nd Edition

    Courses|' 22 Jul 2013

    Nanotransistors is the latest self-paced nanoHUB-U offering by Professor Mark Lundstrom. This updated course features new video lectures as well as revised quizzes and exams. In addition,...

    https://nanohub.org/courses/NT

14. Nanoparticle Assembly Lab

    out of 5 stars 

    28 Jan 2019 | | Contributor(s):: Nicholas Brunk, JCS Kadupitiya, Masaki Uchida, Douglas, Trevor, Vikram Jadhao

    Simulate assembly of nanoparticles into aggregates in physiological conditions.

15. Nanoscale Transistors Lecture 4: MOS Electrostatics

    out of 5 stars 

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

16. Mar 14 2013

    NNIN/C @ Michigan Webinar: Solving for Micro and Macro-scale Electrostatic Configurations using Robin Hood Solver

    Topic: Solving for Micro and Macro-scale Electrostatic Configurations using Robin Hood Solver.Date: March 14th, 2013Time: 11:00 am – 12:00 pm EDT.Presenters:Toni Drabik, Sales Director at Artes...

    https://nanohub.org/events/details/381

17. Notes on the Solution of the Poisson-Boltzmann Equation for MOS Capacitors and MOSFETs, 2nd Edition

    out of 5 stars 

    24 Oct 2012 | | Contributor(s):: Mark Lundstrom, Xingshu Sun

    These notes are intended to complement the discussion on pp. 63 – 68 in Fundamentals of Modern VLSI Devices by Yuan Taur and Tak H. Ning [1]. (Another good reference is Semiconductor Device Fundamentals by R.F. Pierret [2].) The objective is to understand how to treat MOS electrostatics without...

18. Particle Simulations of Ion Generation and Transport in Microelectromechanical Systems and Micropropulsion

    out of 5 stars 

    29 May 2012 | | Contributor(s):: Venkattraman Ayyaswamy

    The first part of the talk deals with use of the PIC method with Monte Carlo collisions (MCC) between electrons and the ambient neutral gas to develop models to predict charge accumulation, breakdown voltage, etc. for various ambient gases, gap sizes, cathode material, and frequency of applied...