Tags: GaN HEMTs

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  1. EPFL HEMT MODEL

    14 Aug 2019 | Compact Models | Contributor(s):

    By Farzan Jazaeri1, jean-michel sallese, Majid Shalchian2, Matthias Bucher3, Nikolaos Makris4

    1. École Polytechnique Fédérale de Lausanne,(EPFL) 2. Amirkabir University of Tehnology 3. Technical University of Crete 4. ECE Technical University of Crete / IESL Foundation for Research and Technology-Hellas

    The EPFL HEMT Model is a design-oriented charge-based model for dc operation of AlGaAs/GaAs and AlGaN/GaN-based high-mobility field-effect transistors. The intrinsic model is physics-based and the...

    https://nanohub.org/publications/301/?v=1

  2. MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) compact model

    29 Aug 2015 | Compact Models | Contributor(s):

    By Ujwal Radhakrishna1, Dimitri Antoniadis2

    1. Massachusetts Institute of Technology (MIT) 2. Massachusetts Institute of Technology

    MIT Virtual Source GaN HEMT-High Voltage (MVSG-HV) model is a charge based physical model for HV-GaN HEMTs suitable for power switching applications.

    https://nanohub.org/publications/73/?v=1