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[Illinois] New directions in III-V MBE: from materials to devices
13 Apr 2017 | Online Presentations | Contributor(s): Minjoo Larry Lee
MNTL Industry Affiliates Program
MVS Nanotransistor Model
01 Dec 2015 | Compact Models | Contributor(s):
By Shaloo Rakheja1, Dimitri Antoniadis1
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semi-empirical compact model for nanoscale transistors that accurately describes the physics of quasi-ballistic transistors with only a few physical parameters.
Is Graphene Alone in the Universe?
05 Dec 2012 | Online Presentations | Contributor(s): Jacob B. Khurgin
In this talk we show that many heterostructures based on III-V (InGaSb) and II-VI (HgCdTe) semiconductors can be engineered to have all the above properties nearly indistinguishable from those of...