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Transistors!
04 Mar 2024 | | Contributor(s):: Mark Lundstrom
As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes...
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ECE 606 L20.1: PN Diode - Band Diagram with Applied Bias
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.2: PN Diode - Derivation of the Forward Bias Formula
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.3: PN Diode - Forward Bias - Non-Linear Regime
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L20.4: PN Diode - Non-Ideal Effects
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L23.1: Schottky Diode - Basics
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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What's the mobility?
08 Sep 2021 | | Contributor(s):: Eric Pop
This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime. The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source...
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IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations
15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis
The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....
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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
19 Mar 2020 | | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 24: MOSFET Non-Idealities
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
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Nanoscale Transistors Lecture 2: IV Characteristics - traditional approach
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
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Solar Cells Lecture 1: Introduction to Photovoltaics
19 Aug 2011 | | Contributor(s):: Mark Lundstrom
An introduction to solar cells covering the basics of PN junctions, optical absorption, and IV characteristics. Key technology options and economic considers are briefly presented.
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FETToy
14 Feb 2006 | | Contributor(s):: Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom
Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs
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Keithley 4200-SCS Lecture 12: Ultra-fast I-V for Pulsed and Transient Characterization
24 Jan 2011 | | Contributor(s):: Lee Stauffer
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Keithley 4200-SCS Lecture 01: Introduction - System Overview - DC I-V Source Measurement
12 Jan 2011 | | Contributor(s):: Lee Stauffer
Introduction to Device Characterization -System Overview: System Architecture, Hardware Features and Software Features -Precision DC I-V Source-Measure Features and Concepts.
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Keithley 4200-SCS Lecture 02: Basics of Keithley Interactive Test Environment (KITE)
12 Jan 2011 | | Contributor(s):: Lee Stauffer
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Keithley 4200-SCS Lecture 03: More KITE Setup and Features
12 Jan 2011 | | Contributor(s):: Lee Stauffer