What's the mobility?
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Abstract
This is a very simple Excel spreadsheet which can be used for quick-and-dirty effective mobility estimates from published current vs. voltage (I-V) transistor data in the linear regime.
The user simply needs to read the drain current, threshold voltage, gate-to-source and drain-to-source voltages from the measurement or the published I-V data, plus the transistor length, insulator thickness and dielectric constant. Knowing (or having a good guess for) the contact resistance is also useful, but if this is unknown it can be varied to check for sensitivity to it. The user is also encouraged to do a sensitivity analysis on other inputs which may have uncertainty, e.g. the threshold voltage, to understand how sensitive the mobility estimate is to these.
The Excel spreadsheet calculates the effective mobility, the average charge density in the channel, the average sheet resistance, the average drift velocity, and the intrinsic drain and gate voltage. Additional tips and a default example (based on published I-V data for monolayer MoS2) are given inside the file.
Author: Eric Pop, epop@stanford.edu
Bio
Eric Pop is a Professor of Electrical Engineering (EE) and of Materials Science & Engineering, by courtesy, at Stanford University, U.S.A. Before joining Stanford, he spent several years on the faculty of University of Illinois Urbana-Champaign (UIUC), and in industry at Intel and IBM. His research interests include one- and two-dimensional materials for electronics, data storage, and energy. He received his PhD in EE from Stanford and earlier degrees from the Massachusetts Institute of Technology (MIT). In his spare time he enjoys snowboarding and tennis, and in a past life he was a college radio DJ. Additional information about the Pop Lab is available online at http://poplab.stanford.edu. His group also maintains a 2D material benchmarking website at http://2d.stanford.edu.
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