Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Tools (1-10 of 10)

  1. MOSFET Simulation

    23 Apr 2014 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

    http://nanohub.org/resources/mosfetsat

  2. MIT Virtual-Source Tool

    06 Nov 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

    http://nanohub.org/resources/vsmod

  3. FETToy

    23 Feb 2011 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

    http://nanohub.org/resources/fettoy

  4. OMEN Nanowire

    15 Dec 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

    Full-band 3D quantum transport simulation in nanowire structure

    http://nanohub.org/resources/omenwire

  5. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    08 Aug 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

    http://nanohub.org/resources/abacus

  6. Medici

    24 Jul 2007 | Tools | Contributor(s): Steven Clark

    MEDICI (Synopsys)

    http://nanohub.org/resources/medici

  7. PETE : Purdue Emerging Technology Evaluator

    27 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Estimate circuit level performance and power of novel devices

    http://nanohub.org/resources/pete

  8. Illinois Tools: MOCA

    28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney

    A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

    http://nanohub.org/resources/moca

  9. Modeling Interface-defect Generation (MIG)

    28 Aug 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes device reliability based on NBTI

    http://nanohub.org/resources/devrel

  10. MOSFet

    30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, SungGeun Kim, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

    Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

    http://nanohub.org/resources/mosfet