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The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Tools (1-9 of 9)

  1. MIT Virtual-Source Tool

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    Users: 195
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    07 Aug 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

    https://nanohub.org/resources/vsmod

  2. FETToy

    This resource has a 9.7 Ranking

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    Total: updated 21 May 2013
    Users: 2842
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    Avg. Review: 5.0 out of 5 stars
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    14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

    Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

    https://nanohub.org/resources/fettoy

  3. OMEN Nanowire

    This resource has a 10.0 Ranking

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    Total: updated 21 May 2013
    Users: 897
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    02 Sep 2008 | Tools | Contributor(s): SungGeun Kim, Mathieu Luisier, Benjamin P Haley, Abhijeet Paul, Saumitra Raj Mehrotra, Gerhard Klimeck

    Full-band 3D quantum transport simulation in nanowire structure

    https://nanohub.org/resources/omenwire

  4. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    This resource has a 10.0 Ranking

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    Users: 4278
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    16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

    https://nanohub.org/resources/abacus

  5. Medici

    This resource has a 9.4 Ranking

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    Users: 130
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    Avg. Review: 4.5 out of 5 stars
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    13 May 2004 | Tools | Contributor(s): Steven Clark

    MEDICI (Synopsys)

    https://nanohub.org/resources/medici

  6. PETE : Purdue Emerging Technology Evaluator

    This resource has a 10.0 Ranking

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    Total: updated 21 May 2013
    Users: 340
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    Avg. Review: 5.0 out of 5 stars
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    26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

    Estimate circuit level performance and power of novel devices

    https://nanohub.org/resources/pete

  7. Illinois Tools: MOCA

    This resource has a 8.5 Ranking

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    Total: updated 21 May 2013
    Users: 410
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    Avg. Review: 4.0 out of 5 stars
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    28 Mar 2007 | Tools | Contributor(s): Mohamed Mohamed, Umberto Ravaioli, Nahil Sobh, derrick kearney

    A 2D Full-band Monte Carlo (MOCA) Simulation of SOI Device Structures

    https://nanohub.org/resources/moca

  8. Modeling Interface-defect Generation (MIG)

    This resource has a 9.4 Ranking

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    Users: 410
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    Avg. Review: 4.0 out of 5 stars
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    18 Jul 2006 | Tools | Contributor(s): Ahmad Ehteshamul Islam, Haldun Kufluoglu, Muhammad A. Alam

    Analyzes device reliability based on NBTI

    https://nanohub.org/resources/devrel

  9. MOSFet

    This resource has a 7.6 Ranking

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    Total: updated 21 May 2013
    Users: 4132
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    Avg. Review: 4.0 out of 5 stars
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    30 Mar 2006 | Tools | Contributor(s): Shaikh S. Ahmed, Saumitra Raj Mehrotra, Matteo Mannino, Gerhard Klimeck, Dragica Vasileska, Xufeng Wang, Himadri Pal, Gloria Wahyu Budiman

    Simulates the current-voltage characteristics for bulk, SOI, and double-gate Field Effect Transistors (FETs)

    https://nanohub.org/resources/mosfet

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