Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

Members (1-15 of 15)

  1. Ivan C R nascimento

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  2. Himanshu Rai

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  3. Al Key

    Technology refresh

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  4. Mohamed Tarek Ghoneim

    Keywords: device physics, flexible electronics, nanotechnology, graphene, nonvolatile memory, reliability, CMOS, physical and electrical characterization, emerging devices, power management, VLSI,...

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  5. Alok Ranjan

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  12. Akash Paharia

    Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device...

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  13. Renaud DAVIOT

    __Researcher at [http://inl.cnrs.fr/ INL]__[[BR]]Reconfigurable digital cells with CNT, Nanowires, molecular devices[[BR]]__Teaching at [http://www.cpe.fr/ CPE Lyon] (France)__[[BR]]FPGA, VHDL,...

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  14. David Espejo

    Former grad student affiliated with the Microelectronics Center at "Universidad de los Andes" or University of the Andes, Bogota- Colombia.

    Current interests: HPC for...

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  15. Saumitra Raj Mehrotra

    Saumitra finished his PhD from Purdue University  (Prof. Gerhard Klimeck) in 2014. He received his MS degree in May 2007 from University of Cincinnati working with Prof....

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