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Tags: MOSFET

Description

The metal–oxide–semiconductor field-effect transistor is a device used for amplifying or switching electronic signals. In MOSFETs, a voltage on the oxide-insulated gate electrode can induce a conducting channel between the two other contacts called source and drain. The channel can be of n-typeor p-type, and is accordingly called an nMOSFET or a pMOSFET (also commonly nMOS, pMOS). It is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. More information on MOSFET can be found here.

All Categories (1-20 of 241)

  1. Models for SETs in PSpice

    Closed | Responses: 0

      Hello. I am trying to simulate hybrid circuits (cMOS SET transistors) and I can't find models for SET, anywhere... I only want a SET that can simulate properly along with regular...

    http://nanohub.org/answers/question/1399

  2. MOSFET Simulation

    04 Oct 2013 | Tools | Contributor(s): Chen Shang, Sankarsh Ramadas, Tanya Faltens, derrick kearney, Krishna Madhavan

    Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

    http://nanohub.org/resources/mosfetsat

  3. Al Key

    Technology refresh

    http://nanohub.org/members/89988

  4. Tunnel FETs - Device Physics and Realizations

    10 Jul 2013 | Online Presentations | Contributor(s): Joachim Knoch

    Here, the operating principles of TFETs will be discussed in detail and experimental realizations as well as simulation results will be presented. In particular, the role of the injecting source...

    http://nanohub.org/resources/18723

  5. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Papers | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  6. III-V Nanoscale MOSFETS: Physics, Modeling, and Design

    28 Jun 2013 | Papers | Contributor(s): Yang Liu

    As predicted by the International Roadmap for Semiconductors (ITRS), power consumption has been the bottleneck for future silicon CMOS technology scaling. To circumvent this limit, researchers are...

    http://nanohub.org/resources/18694

  7. Computational and Experimental Study of Transport in Advanced Silicon Devices

    28 Jun 2013 | Papers | Contributor(s): Farzin Assad

    In this thesis, we study electron transport in advanced silicon devices by focusing on the two most important classes of devices: the bipolar junction transistor (BJT) and the MOSFET. In regards...

    http://nanohub.org/resources/18769

  8. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Papers | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  9. Nanoscale MOSFETS: Physics, Simulation and Design

    28 Jun 2013 | Papers | Contributor(s): Zhibin Ren

    This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of...

    http://nanohub.org/resources/18763

  10. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    28 Jun 2013 | Papers | Contributor(s): Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive...

    http://nanohub.org/resources/18765

  11. ECE 695A Lecture 9R: Review Questions

    08 Feb 2013 | Online Presentations | Contributor(s): Muhammad Alam

    Review Questions: Does NBTI power-exponent depend on voltage or temperature? Do you expect the NBTI power-exponent to be larger or smaller if trapping is important? How does one know that...

    http://nanohub.org/resources/16778

  12. ECE 606 Lecture 27: Looking Back and Looking Forward

    20 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16122

  13. ECE 606 Lecture 25: Modern MOSFETs

    03 Dec 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/16055

  14. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15977

  15. ECE 606 Lecture 23: MOSFET I-V Characteristics/MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15978

  16. ECE 606 Lecture 24: MOSFET Non-Idealities

    26 Nov 2012 | Online Presentations | Contributor(s): Gerhard Klimeck

    http://nanohub.org/resources/15979

  17. MIT Virtual-Source Tool

    07 Aug 2012 | Tools | Contributor(s): Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom

    Virtual Source Model for MOSFET compact modeling

    http://nanohub.org/resources/vsmod

  18. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...

    http://nanohub.org/wiki/EduSemiconductor

  19. Nanoscale Transistors Lecture 11: MOSFET Limits and Possibilities

    19 Jul 2012 | Online Presentations | Contributor(s): Mark Lundstrom

    http://nanohub.org/resources/14772

  20. Sabbir Ebna Razzaque

    http://nanohub.org/members/67938

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