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Onkar Shrinivas Bhende
https://nanohub.org/members/52322
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MOSFET Lab - Scaling
03 Jan 2011 | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska
The concept of device scaling and the need to control short channel effects is used in this real life problem
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ABACUS: MOSFET - Diffusion Process
09 Aug 2010 | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
The goal of this assignment is to make familiar the students the required doses in the diffusion step of fabrication of semiconductor devices to get certain values of the volume doping densities.
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Threshold voltage in a nanowire MOSFET
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...
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i need detail about nanoscale double gate cmos mosfet
Q&A|Closed | Responses: 1
to model a cmos double gate mosfet, what are the parameters need to be considered
https://nanohub.org/answers/question/478
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How to modify Datta’s 1D Matrix Density Matlab code to simulate a germanium pMOS
Q&A|Closed | Responses: 0
How would one modify Datta’s 1D Matrix Density Matlab code (shown in Quantum transport:Atom to Transistor) in order to simulate a germanium pMOS (the code shown simulates a static 1D Si...
https://nanohub.org/answers/question/380
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Exercise for MOSFET Lab: DIBL Effect
03 Aug 2009 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
In this exercise students are required to examine the drain induced barrier lowering (DIBL) effect in short channel MOSFET devices.
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Exercise for MOSFET Lab: Long Channel vs. Short Channel Device
03 Aug 2009 | | Contributor(s):: Dragica Vasileska
In this exercise studentsare required to simulate long channel device for which the graduate channel approximation is valid and the short channel device for which velocity saturation effect starts to play significant role.
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Srinivasa Murali Dunga
https://nanohub.org/members/22807