Tags: nanotransistors

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A nanotransistor is a transistor whose dimensions are measured in nanometers. Transistors are used for switching and amplifying electronic signals. When combined in the millions and billions, they can be used to create sophisticated programmable information processors.

 

Resources (101-120 of 449)

  1. ECE 612 Lecture 27: RF CMOS

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    Online Presentations | 23 Jan 2007 | Contributor(s):: Mark Lundstrom

  2. ECE 612 Lecture 28: Overview of SOI Technology

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    Online Presentations | 30 Nov 2006 | Contributor(s):: Mark Lundstrom

  3. ECE 612 Lecture 29: SOI Electrostatics

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    Online Presentations | 04 Dec 2006 | Contributor(s):: Mark Lundstrom

  4. ECE 612 Lecture 2: 1D MOS Electrostatics II

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    Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) ‘Exact’ solution (bulk), 3) Approximate solution (bulk), 4) Approximate solution (ultra-thin body), 5) Summary.

  5. ECE 612 Lecture 2: Introduction to Device Simulation

    5.0 out of 5 stars 

    Online Presentations | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

  6. ECE 612 Lecture 30: UTB SOI Electrostatics

    0.0 out of 5 stars 

    Online Presentations | 08 Jan 2007 | Contributor(s):: Mark Lundstrom

  7. ECE 612 Lecture 31: Heterostructure Fundamentals

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    Online Presentations | 08 Dec 2006 | Contributor(s):: Mark Lundstrom

  8. ECE 612 Lecture 32: Heterojunction Diodes

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    Online Presentations | 08 Dec 2006 | Contributor(s):: Mark Lundstrom

  9. ECE 612 Lecture 33: Heterojunction Bipolar Transistors

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    Online Presentations | 11 Dec 2006 | Contributor(s):: Mark Lundstrom

  10. ECE 612 Lecture 34: Heterostructure FETs

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    Online Presentations | 04 Jan 2007 | Contributor(s):: Mark Lundstrom

  11. ECE 612 Lecture 3: 1D MOS Electrostatics

    4.0 out of 5 stars 

    Online Presentations | 08 Aug 2006 | Contributor(s):: Mark Lundstrom

  12. ECE 612 Lecture 3: MOS Capacitors

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    Online Presentations | 09 Sep 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Short review,2) Gate voltage / surface potential relation,3) The flatbandvoltage,4) MOS capacitance vs. voltage, 5) Gate voltage and inversion layer charge.

  13. ECE 612 Lecture 4: MOS Capacitors

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    Online Presentations | 05 Sep 2006 | Contributor(s):: Mark Lundstrom

  14. ECE 612 Lecture 4: Polysilicon Gates/QM Effects

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    Online Presentations | 12 Sep 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Review, 2) Workfunctionof poly gates,3) CV with poly depletion,4) Quantum mechanics and VT,5) Quantum mechanics and C,6) Summary.

  15. ECE 612 Lecture 5: MOSFET IV: Square law and bulk charge

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    Online Presentations | 07 Oct 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Introduction,2) Square law theory,3) PN junction effects on MOSFETs,4) Bulk charge theory (exact),5) Summary.

  16. ECE 612 Lecture 5: Poly Si Gate MOS Capacitors

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    Online Presentations | 05 Sep 2006 | Contributor(s):: Mark Lundstrom

  17. ECE 612 Lecture 6: MOSFET IV: Velocity saturation

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    Online Presentations | 07 Oct 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Review,2) Bulk charge theory (approximate),3) Velocity saturation theory,4) Summary.

  18. ECE 612 Lecture 6: Quantum Mechanical Effects

    5.0 out of 5 stars 

    Online Presentations | 05 Sep 2006 | Contributor(s):: Mark Lundstrom

  19. ECE 612 Lecture 7: MOSFET IV, Part I

    5.0 out of 5 stars 

    Online Presentations | 11 Sep 2006 | Contributor(s):: Mark Lundstrom

  20. ECE 612 Lecture 7: Scattering Theory of the MOSFET I

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    Online Presentations | 08 Oct 2008 | Contributor(s):: Mark Lundstrom

    Outline: 1) Review and introduction,2) Scattering theory of the MOSFET,3) Transmission under low VDS,4) Transmission under high VDS,5) Discussion,6) Summary.