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Tags: NEGF

Description

The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer approach for ballistic, non-interacting electronics to include inelastic scattering and strong correlation effects at an atomistic level.

Check out Supriyo Datta's NEGF page for more information, or browse through the various resources listed below.

All Categories (1-20 of 323)

  1. The NEGF Approach to Nano-Device Simulation

    The non-equilibrium Greens function (NEGF) formalism provides a powerful conceptual and computational framework for treating quantum transport in nanodevices. It goes beyond the Landauer...

    http://nanohub.org/wiki/Negf

  2. Issue in obtaining solution of Poisson eq. for self-consistent calculation in NEGF

    Closed | Responses: 0

    Hi,

    I’ve been working on an exercise matlab code posted by Prof. S. Datta. ( http://nanohub.org/answers/question/1383

  3. Which tool can I use to simulate RITD?

    Closed | Responses: 0

    http://nanohub.org/answers/question/1359

  4. Magnetic Tunnel Junction Lab

    23 Sep 2013 | Tools | Contributor(s): Samiran Ganguly, Deepanjan Datta, Chen Shang, Sankarsh Ramadas, Sayeef Salahuddin, Supriyo Datta

    Calculate Resistance, Tunneling Magneto Resistance, Spin Torques, and Switching characteristics of a Magnetic Tunnel Junction

    http://nanohub.org/resources/mtjlab

  5. Efficiency Enhancement for Nanoelectronic Transport Simulations

    02 Feb 2014 | Publications | Contributor(s): Jun Huang

    PhD thesis of Jun Huang Continual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically...

    http://nanohub.org/resources/20248

  6. Zhichao Yang

    http://nanohub.org/members/89859

  7. MATLAB codes from "Nanoscale device modeling: the Green's function method"

    10 Oct 2013 | Downloads | Contributor(s): Supriyo Datta

    The MATLAB programs used to generate the figures in the article that appeared in Superlattices and Microstructures, vol.28, p.253 (2000).

    http://nanohub.org/resources/19564

  8. Zain. Y. Mijbil

    Ph.D. Student at Lancaster University under the supervision of Prof. C.J.Lambert.

    http://nanohub.org/members/85629

  9. Device Physics Studies of III-V and Silicon MOSFETS for Digital Logic

    28 Jun 2013 | Publications | Contributor(s): Himadri Pal

    III-V's are currently gaining a lot of attraction as possible MOSFET channel materials due to their high intrinsic mobility. Several challenges, however, need to be overcome before III-V's can...

    http://nanohub.org/resources/18697

  10. Physics and Simulation of Nanoscale Electronic and Thermoelectric Devices

    28 Jun 2013 | Publications | Contributor(s): raseong kim

    For the past few decades, transistors have been continuously scaled. Dimensions are now at the nanoscale, and device performance has dramatically improved. Nanotechnology is also achieving...

    http://nanohub.org/resources/18690

  11. Quantum and Atomistic Effects in Nanoelectronic Transport Devices

    28 Jun 2013 | Publications | Contributor(s): Neophytos Neophytou

    As devices scale towards atomistic sizes, researches in silicon electronic device technology are investigating alternative structures and materials. As predicted by the International Roadmap for...

    http://nanohub.org/resources/18705

  12. Carbon Nanotube Electronics: Modeling, Physics, and Applications

    28 Jun 2013 | Publications | Contributor(s): Jing Guo

    In recent years, significant progress in understanding the physics of carbon nanotube electronic devices and in identifying potential applications has occurred. In a nanotube, low bias transport...

    http://nanohub.org/resources/18742

  13. Exploring New Channel Materials for Nanoscale CMOS

    28 Jun 2013 | Publications | Contributor(s): Anisur Rahman

    The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the...

    http://nanohub.org/resources/18738

  14. Physics and Simulation of Quasi-Ballistic Transport in Nanoscale Transistors

    28 Jun 2013 | Publications | Contributor(s): Jung-Hoon Rhew

    The formidable progress in microelectronics in the last decade has pushed the channel length of MOSFETs into decanano scale and the speed of BJTs into hundreds of gigahertz. This progress imposes...

    http://nanohub.org/resources/18747

  15. naveen kaushik

    http://nanohub.org/members/83665

  16. farha diba sumana

    http://nanohub.org/members/71370

  17. What can be done with help on NEGF formalism as final year BSc project?

    Closed | Responses: 0

    I have been studying the nanoelectronics lectures by Dr. Supriyo Datta & also followed his NanohubU...

    http://nanohub.org/answers/question/1073

  18. Krishnakali Chaudhuri

    http://nanohub.org/members/70104

  19. Kai Kwok

    Kai H. Kwok (S’88-M’01-SM’07, IEEE) received the B.A.Sc. degree in Computer Engineering at University of Waterloo, Waterloo, ON, Canada, in 1993. He then received the M.A.Sc. degree and Ph. D....

    http://nanohub.org/members/64072

  20. Dissipative Quantum Transport in Semiconductor Nanostructures

    28 Dec 2011 | Publications | Contributor(s): Peter Greck

    In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism,...

    http://nanohub.org/resources/12756

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