Papers (1-9 of 9)

1. Introduction to Quantum Transport

   30 Jan 2022 | | Contributor(s):: Supriyo Datta

   Everyone is familiar with the amazing performance of a modern smartphone, powered by a billion-plus nanotransistors, each having an active region that is barely a few hundred atoms long. The same amazing technology has also led to a deeper understanding of the nature of current flow and heat...

2. Efficiency Enhancement for Nanoelectronic Transport Simulations

   02 Feb 2014 | | Contributor(s):: Jun Huang

   PhD thesis of Jun HuangContinual technology innovations make it possible to fabricate electronic devices on the order of 10nm. In this nanoscale regime, quantum physics becomes critically important, like energy quantization effects of the narrow channel and the leakage currents due to tunneling....

3. Modeling Quantum Transport in Nanoscale Transistors

   28 Jun 2013 | | Contributor(s):: Ramesh Venugopal

   As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

4. Nanoscale MOSFETS: Physics, Simulation and Design

   28 Jun 2013 | | Contributor(s):: Zhibin Ren

   This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of appropriate physics and methodology in device modeling, 2)development of a new TCAD (technology computer aided...

5. Dissipative Quantum Transport in Semiconductor Nanostructures

   28 Dec 2011 | | Contributor(s):: Peter Greck

   In this work, we investigate dissipative quantum transport properties of an open system. After presenting the background of ballistic quantum transport calculations, a simple scattering mechanism, called Büttiker Probes, is introduced. Then, we assess the properties of the Büttiker Probe model...

6. Quantum transport in semiconductor nanostructures

   04 Mar 2010 | | Contributor(s):: Tillmann Christoph Kubis

   PhD thesis of Tillmann Christoph KubisThe main objective of this thesis is to theoretically predict the stationary charge and spin transport in mesoscopic semiconductor quantum devices in the presence of phonons and device imperfections. It is well known that the nonequilibrium Green's function...

7. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

   out of 5 stars 

   14 Jan 2008 | | Contributor(s):: Roger Lake

   The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

8. Electron-Phonon and Electron-Electron Interactions in Quantum Transport

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   14 Jan 2008 | | Contributor(s):: Gerhard Klimeck

   The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...

9. Quantum Ballistic Transport in Semiconductor Heterostructures

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   27 Aug 2007 | | Contributor(s):: Michael McLennan

   The development of epitaxial growth techniques has sparked a growing interest in an entirely quantum mechanical description of carrier transport. Fabrication methods, such as molecular beam epitaxy (MBE), allow for growth of ultra-thin layers of differing material compositions. Structures can be...