
How to model electrical transport in large conductors?
Closed  Responses: 0
For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells.
My questions...
http://nanohub.org/answers/question/1154

How to model metal/source drain MOSFET in nanoscale device simulators?
Open  Responses: 1
Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface?
Thanks
http://nanohub.org/answers/question/854

de Broglie wavelength
Open  Responses: 1
Regarding our discussion yesterday, you mentioned that DeBroglie
wavelength in metals is approx. 1A. I...
http://nanohub.org/answers/question/7

Timedependent NEGF
Open  Responses: 1
In the timedependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting
an IV equation that is making it difficult for me to group terms. For instance, looking at...
http://nanohub.org/answers/question/6

Charging energy
Open  Responses: 1
>About the multielectron picture you have been talking,
>I would like to know, if I put two electrons at the
>same time from the source to the channel rather than
>putting one...
http://nanohub.org/answers/question/5

Degeneracy factor for holes
Open  Responses: 1
You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is:
ND+ =...
http://nanohub.org/answers/question/3