Description

Resources (61-80 of 81)

1. Matdcal

   30 Jan 2008 | | Contributor(s):: Kirk Bevan

   Non-equilibrium Green's Function Density Functional Theory Simulator

2. Modeling Quantum Transport in Nanoscale Transistors

   27 Jun 2013 | | Contributor(s):: Ramesh Venugopal

   As critical transistor dimensions scale below the 100 nm (nanoscale) regime, quantum mechanical effects begin to manifest themselves and affect important device performance metrics. Therefore, simulation tools which can be applied to design nanoscale transistors in the future, require new theory...

3. nanoDDSCAT

   23 Apr 2013 | | Contributor(s):: Prashant K Jain, Nahil Sobh, Jeremy Smith, AbderRahman N Sobh, Sarah White, Jacob Faucheaux, John Feser

   Calculate scattering and absorption of light by targets with arbitrary geometries and complex refractive index.

4. nanoDDSCAT+

   13 Aug 2014 | | Contributor(s):: AbderRahman N Sobh, Sarah White, Jeremy Smith, Nahil Sobh, Prashant K Jain

   Combines the Discrete Dipole Scattering (DDSCAT) tool with the DDAConvert tool for a single workflow for custom shapes.

5. Nanoelectronic Modeling Lecture 23: NEMO1D - Importance of New Boundary Conditions

   02 Mar 2010 | | Contributor(s):: Gerhard Klimeck

   One of the key insights gained during the NEMO1D project was the development of new boundary conditions that enabled the modeling of realistically extended Resonant Tunneling Diodes (RTDs). The new boundary conditions are based on the partitioning of the device into emitter and collector...

6. Nanoelectronic Modeling Lecture 24: NEMO1D - Incoherent Scattering

   02 Mar 2010 | | Contributor(s):: Gerhard Klimeck

   Incoherent processes due to phonons, interface roughness and disorder had been suspected to be the primary source of the valley current of resonant tunneling diodes (RTDs) at the beginning of the NEMO1D project in 1994. The modeling tool NEMO was created at Texas Instruments to fundamentally...

7. Nanoelectronic Modeling Lecture 25a: NEMO1D - Full Bandstructure Effects

   02 Mar 2010 | | Contributor(s):: Gerhard Klimeck

   (quantitative RTD modeling at room temperature)

8. Nanoelectronic Modeling Lecture 26: NEMO1D -

   02 Mar 2010 | | Contributor(s):: Gerhard Klimeck

   NEMO1D demonstrated the first industrial strength implementation of NEGF into a simulator that quantitatively simulated resonant tunneling diodes. The development of efficient algorithms that simulate scattering from polar optical phonons, acoustic phonons, alloy disorder, and interface roughness...

9. nanoJoule

   28 May 2008 | | Contributor(s):: Feifei Lian, Feifei Lian, Feifei Lian

   This tool performs a self-consistent simulation of the current-voltage curve of a metallic single-wall carbon nanotube with Joule heating.

10. Nanoscale Transistors Lecture 10: Scattering Model

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

11. Nanoscale Transistors Lecture 9: Scattering and Transmission

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

12. Notes on Scattering and Mobility in 1D, 2D, and 3D

    03 Nov 2009 | | Contributor(s):: Dmitri Nikonov, Md. Sayed Hasan, George Bourianoff

    Derivation of the phonon-limited mobility is reviewed for electrons in bulk (3D) orquantum confined (2D and 1D) semiconductor structures. Analytical estimates are madethat show the mobility in quantum confined structures is, in general, lower or no higherthan in non-confined ones.

13. Phonon Interactions in Single-Dopant-Based Transistors: Temperature and Size Dependence

    12 Nov 2015 | | Contributor(s):: Marc Bescond, Nicolas Cavassilas, Salim Berrada

    IWCE 2015 presentation. in this work we investigate the dependence of electron-phonon scattering in single dopant-based nanowire transistor with respect to temperature and dimensions. we use a 3d real-space non-equilibrium green': ; s function (negf) approach where electron-phonon...

14. SDMS L4.03: Mobility Modeling

    26 Sep 2023 | | Contributor(s):: Dragica Vasileska

15. Short Channel Effects

    04 Mar 2021 | | Contributor(s):: Ashish anil Bait

    Here are the all short channel effects that you require.

16. Surface scattering: Made simple

    03 Sep 2010 | | Contributor(s):: Dmitri Nikonov, Himadri Pal

    Surface scattering in a quantum well.

17. Thermal Energy at the Nanoscale

    31 Jan 2022 | | Contributor(s):: Timothy S Fisher

    These lecture notes provide a detailed treatment of the thermal energy storage and transport by conduction in natural and fabricated structures.

18. Tutorial 2: A Bottom-Up View of Heat Transfer in Nanomaterials

    23 Mar 2011 | | Contributor(s):: Timothy S Fisher

    This lecture provides a theoretical development of the transport of thermal energy by conduction in nanomaterials. The physical nature of energy transport by two carriers—electrons and phonons--will be explored from basic principles using a common Landauer framework. Issues including the quantum...

19. Tutorial 4a: High Bias Quantum Transport in Resonant Tunneling Diodes

    23 Mar 2011 | | Contributor(s):: Gerhard Klimeck

    Outline:Resonant Tunneling Diodes - NEMO1D: Motivation / History / Key InsightsOpen 1D Systems: Transmission through Double Barrier Structures - Resonant TunnelingIntroduction to RTDs: Linear Potential DropIntroduction to RTDs: Realistic Doping ProfilesIntroduction to RTDs: Relaxation Scattering...

20. Two-Dimensional Scattering Matrix Simulations of Si MOSFET'S

    27 Jun 2013 | | Contributor(s):: Carl R. Huster

    For many years now, solid state device simulators have been based on the drift-diffusion equations. As transistor sizes have been reduced, there has been considerable concern about the predictive capability of these simulators. This concern has lead to the development of a number of simulation...