Transistors!
Papers | 04 Mar 2024 | Contributor(s): Mark Lundstrom
As we begin a new era, in which making transistors smaller will no longer be a major driving force for progress, it is time to look back at what we have learned in transistor research. Today we see a need to convey as simply and clearly as possible the essential physics of the device that makes...
Near-Equilibrium Transport Fundamentals and Applications
Papers | 30 Jan 2022 | Contributor(s): Mark Lundstrom, Changwook Jeong
These lectures are designed to introduce students to the fundamentals of carrier transport in nano-devices using a novel, “bottom up approach” that agrees with traditional methods when devices are large, but which also works for nano-devices.
Fundamentals of Nanotransistors
Papers | 30 Jan 2022 | Contributor(s): Mark Lundstrom
The objective of these lectures is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a...
Notes on Fermi-Dirac Integrals (4th Edition)
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Papers | 23 Sep 2008 | Contributor(s): raseong kim, Xufeng Wang, Mark Lundstrom
Fermi-Dirac integrals appear frequently in semiconductor problems, so an understanding of their properties is essential. The purpose of these notes is to collect in one place, some basic information about Fermi-Dirac integrals and their properties.We also present Matlab functions (in a zipped...
Electronics from the "Bottom Up": An Intel-NCN@Purdue initiative in nanoelectronics education
Papers | 05 Jul 2007 | Contributor(s): Mark Lundstrom, Supriyo Datta, Muhammad A. Alam
In the 1960’s, a group of leaders from industry and academia, the Semiconductor Electronics Education Committee (SEEC), recognized that the age of vacuum tubes was ending, and that engineers would have to be educated differently if they were to realize the opportunities that the new field of...
A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
Papers | 30 Oct 2006 | Contributor(s): Jing Wang, POLIZZI ERIC, Mark Lundstrom
The silicon nanowire transistor (SNWT) is a promising device structure for future integrated circuits, and simulations will be important for understanding its device physics and assessing its ultimate performance limits. In this work, we present a three-dimensional quantum mechanical simulation...
Modeling of Nanoscale Devices
Papers | 19 Oct 2006 | Contributor(s): M. P. Anantram, Mark Lundstrom, Dmitri Nikonov
We aim to provide engineers with an introductionto the nonequilibriumGreen’s function (NEGF) approach, which is a powerful conceptual tool and a practical analysismethod to treat nanoscale electronic devices with quantum mechanicaland atomistic effects. We first review the basis for the...
A Quantum Mechanical Analysis of Channel Access Geometry and Series Resistance in Nanoscale Transistors
Papers | 19 Oct 2006 | Contributor(s): Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
In this paper, we apply a two-dimensional quantum mechanical simulation scheme to study the effect of channel access geometries on device performance. This simulation scheme solves the non-equilibrium Green’s function equations self-consistently with Poisson’s equation and treats the effect of...
nanoMOS 2.0: A Two -Dimensional Simulator for Quantum Transport in Double-Gate MOSFETs
Papers | 06 Oct 2006 | Contributor(s): Zhibin Ren, Ramesh Venugopal, Sebastien Goasguen, Supriyo Datta, Mark Lundstrom
A program to numerically simulate quantum transport in double gate MOSFETs is described. The program uses a Green’s function approach and a simple treatment of scattering based on the idea of so-called Büttiker probes. The double gate device geometry permits an efficient mode space approach that...
Simulating Quantum Transport in Nanoscale Transistors: Real versus Mode-Space Approaches
Papers | 28 Sep 2006 | Contributor(s): Zhibin Ren, Supriyo Datta, Mark Lundstrom, Ramesh Venugopal, D. Jovanovic
In this paper, we present a computationally efficient, two-dimensional quantum mechanical sim- ulation scheme for modeling electron transport in thin body, fully depleted, n-channel, silicon- on-insulator transistors in the ballistic limit. The proposed simulation scheme, which solves the...
Towards Multi-Scale Modeling of Carbon Nanotube Transistors
Papers | 20 Sep 2006 | Contributor(s): Jing Guo, Supriyo Datta, Mark Lundstrom, M. P. Anantram
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube...
Notes on the Ballistic MOSFET
Papers | 08 Oct 2005 | Contributor(s): Mark Lundstrom
When analyzing semiconductor devices, the traditional approach is to assume that carriers scatter frequently from ionized impurities, phonons, surface roughness, etc. so that the average distance between scattering events (the so-called mean-free-path, λ) is much shorter than the device. When...
Theory of Ballistic Nanotransistors
Papers | 27 Nov 2002 | Contributor(s): Anisur Rahman, Jing Guo, Supriyo Datta, Mark Lundstrom
Numerical simulations are used to guide the development of a simple analytical theory for ballistic field-effect transistors. When two-dimensional electrostatic effects are small, (and when the insulator capacitance is much less than the semiconductor (quantum) capacitance), the model reduces to...