Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
Papers | 28 Jun 2013 | Contributor(s): Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier mobilities...
Cylindrical CNT MOSFET Simulator
Tools | 22 Jul 2008 | Contributor(s): Gloria Wahyu Budiman, Yunfei Gao, Xufeng Wang, Siyu Koswatta, Mark Lundstrom
Simulate 2-D electrons transport in CNTFET
MOSCNT: code for carbon nanotube transistor simulation
3.5 out of 5 stars
Downloads | 14 Nov 2006 | Contributor(s): Siyu Koswatta, Jing Guo, Dmitri Nikonov
Ballistic transport in carbon nanotube metal-oxide-semiconductor field-effect transistors (CNT-MOSFETs) is simulated using the Non-equilibrium Green’s function formalism. A cylindrical transistor geometry with wrapped-around gate and doped source/drain regions are assumed. It should be noted that...
recursive algorithm for NEGF in Matlab
0.0 out of 5 stars
Downloads | 13 Nov 2006 | Contributor(s): Dmitri Nikonov, Siyu Koswatta
This zip-archive contains two Matlab functions for the recursive solution of the partial matrix inversion and partial 3-matrix multiplication used in the non-equilibrium Green’s function (NEGF) method.recuresealg3d.m- works for 3-diagonal matricesrecuresealgblock3d.m- works for 3-block-diagonal...
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