MIT Virtual-Source Model

By Xingshu Sun1; Xufeng Wang1; Yubo Sun1; Mark Lundstrom1

1. Purdue University

Virtual Source Model for MOSFET compact modeling

Launch Tool

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Archive Version 1.0
Published on 06 Nov 2012 All versions

doi:10.4231/D3MS3K127 cite this

This tool is closed source.

Category

Tools

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Abstract

This tool is a 1-D simulator designed especially for short-channel FETs. It utilizes a physics-based compact FET model, referred to as the MIT virtual-source (VS) model. The VS model contains sixteen parameters, eleven of which can be directly obtained from measurements. Therefore, the VS model contains only five fit parameters. After entering required parameters, users can plot ID vs. VGS and ID vs. VDS both in linear and logarithm coordinates.

Credits

The VS simulator was written by Yubo Sun and Xingshu Sun. User interface was created by Xufeng Wang and Xingshu Sun.

References

A. Khakifirooz, O. M. Nayfeh, and D. A. Antoniadis, “A simple semi-empirical short-channel MOSFET current–Voltage model continuous across all regions of operation and employing only physical parameters,” IEEE Trans. on Electron Devices, vol. 56, no. 8, pp. 1674-1680, Aug. 2009.

Cite this work

Researchers should cite this work as follows:

  • Xingshu Sun, Xufeng Wang, Yubo Sun, Mark Lundstrom (2014), "MIT Virtual-Source Model," https://nanohub.org/resources/vsmod. (DOI: 10.4231/D3MS3K127).

    BibTex | EndNote

Submitter

NEEDS Node

Purdue University

Tags

  1. MOSFET
  2. nanoelectronics
  3. NEEDS node
  4. virtual source model