1. cylindrical geometry for mosfet in PADRE

   Closed | Responses: 1

   how to define a cylindrical geometry for mosfet in padre?

   http://nanohub.org/answers/question/422

2. relation between the si thickness and current

   Open | Responses: 1

   i have a question about role of the si thickness in computing of the current. in ultra,thin body mosfet, what relation is there between the si thickness and current?

   http://nanohub.org/answers/question/272

3. How do I derive the 2D electron density used in nano MOSFET calculations?

   Open | Responses: 1

   In nanomos-2.5, the density of charge is obtained by multiplying the square of the wavefunction by a prefactor: with semiclassical method, that prefactor is given by …

   http://nanohub.org/answers/question/54

4. validation of Boundary condition for poisson in open quantum systems

   Closed | Responses: 1

   i had used both fixed and floating boundary conditions in S/D for simulation of 2D-DGMOSFET. using floating boundary condition,i got the potential profile which the difference betten Efs and Efd does …

   http://nanohub.org/answers/question/50

5. Is there any free licence drift diffusion device simulator that supports MOS and bipolar devices

   Open | Responses: 1

   A sequel to this question is : Is Bambi simulator still available ??

   http://nanohub.org/answers/question/39

Total 5 results found. | See more results

1. Band Structure Lab

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   19 May 2006 | Tools | Contributor(s): Abhijeet Paul, Mathieu Luisier, Junzhe Geng, Junzhe Geng, Junzhe Geng, Junzhe Geng, Junzhe Geng, Junzhe Geng

   Computes the electronic structure of various materials in the spatial configuration of bulk (infinitely periodic), quantum wells (confined in one dimension, infinitely periodic in 2 dimensions), and …

   http://nanohub.org/resources/bandstrlab

2. Nanoscale MOSFETs: Physics, Simulation and Design

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   26 Oct 2006 | Publications | Contributor(s): Zhibin Ren

   This thesis discusses device physics, modeling and design issues of nanoscale transistors at the quantum level. The principle topics addressed in this report are 1) an implementation of …

   http://nanohub.org/resources/1917

3. MSE 376 Lecture 12: Nanoscale CMOS, part 1

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   31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam

   http://nanohub.org/resources/2537

4. MSE 376 Lecture 13: Nanoscale CMOS, part 2

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   31 Mar 2007 | Online Presentations | Contributor(s): Mark Hersam

   http://nanohub.org/resources/2538

5. PETE : Purdue Emerging Technology Evaluator

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   26 Jun 2007 | Tools | Contributor(s): Arijit Raychowdhury, Charles Augustine, Yunfei Gao, Mark Lundstrom, Kaushik Roy

   Estimate circuit level performance and power of novel devices

   http://nanohub.org/resources/pete

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1. madFETs

   mad-FET The Field-Effect-Transistor has been proposed and implement in many physical systems, materials, and geometries. A multitude of acronyms have developed around these concepts. The …

   http://nanohub.org/topics/madFETs

2. ABACUS—Introduction to Semiconductor Devices

   Introduction When we hear the words, semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic …

   http://nanohub.org/topics/EduSemiconductor

Total 2 results found.

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   Saumitra Raj Mehrotra

   Since August 2007 Saumitra is a PhD student at Purdue University in Prof. Klimeck's group. He received his MS degree in May 2007 from University of Cincinnati working with Prof. K.P. Roenker. For …

   http://nanohub.org/members/10858

2. 

   Renaud DAVIOT

   __Researcher at [http://inl.cnrs.fr/ INL]__[[BR]] Reconfigurable digital cells with CNT, Nanowires, molecular devices[[BR]] __Teaching at [http://www.cpe.fr/ CPE Lyon] (France)__[[BR]] FPGA, …

   http://nanohub.org/members/26856

3. 

   Akash Paharia

   Currently, I am an undergraduate student in Electrical Department of Indian Institute of Technology ,Delhi. I am interested in knowing about new technologies in the field of semiconductors device …

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