Silvaco Athena - Part 3

09 Aug 2011 | Teaching Materials | Contributor(s): Dragica Vasileska

This set of slides describes the fabrication of 100 nm channel length MOSFET device. At the end the formation of Bird's Beaks is discussed.

http://nanohub.org/resources/11819

MOSFET Lab Exercise: Series Resistance and Transistor Breakdown

13 Jul 2011 | Teaching Materials | Contributor(s): Dragica Vasileska, Gerhard Klimeck

This exercise is supposed to teach the students the role of the source and drain resistance on device output characteristics. The second portion of the assignment is supposed to train students how to …

http://nanohub.org/resources/11650

Negative Bias Temperature Instability (NBTI) in p-MOSFETs: Characterization, Material/Process Dependence and Predictive Modeling

11 May 2011 | Online Presentations | Contributor(s): Souvik Mahapatra

This is a presentation on Negative Bias Temperature Instability, or in short NBTI, observed in p channel MOSFET devices. Though NBTI has been discovered more than 40 years ago, in the last 10 years …

http://nanohub.org/resources/11249

simulation does not give any result

Closed | Responses: 0

I simulated a n-type mosfet with following settings: device type mosfet n-type gaussian S/D doping density source/drain length: 50nm source/drain nodes: 15 channel length: 35 oxide …

http://nanohub.org/answers/question/771

FETToy

14 Feb 2006 | Tools | Contributor(s): Anisur Rahman, Jing Wang, Jing Guo, Md. Sayed Hasan, Yang Liu, Akira Matsudaira, Shaikh S. Ahmed, Supriyo Datta, Mark Lundstrom

Calculate the ballistic I-V characteristics for conventional MOSFETs, Nanowire MOSFETs and Carbon NanoTube MOSFETs

http://nanohub.org/resources/220

OMEN Nanowire Homework Problems

23 Jan 2011 | Teaching Materials | Contributor(s): SungGeun Kim

OMEN Nanowire homework problems: anyone who has gone through the first-time user guide of OMEN Nanowire and done the examples in the guide should be able to run simulations in these homework …

http://nanohub.org/resources/10512

MOSFET Lab - Scaling

02 Jan 2011 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck, Dragica Vasileska

The concept of device scaling and the need to control short channel effects is used in this real life problem

http://nanohub.org/resources/10268

MOSFET Design Calculations - Step 1

30 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

http://nanohub.org/resources/10245

MOSFET Design Calculations - Step 1 (Instructor Copy)

30 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

http://nanohub.org/resources/10252

MOSFET Design Calculations - Step 2

31 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

http://nanohub.org/resources/10258

MOSFET Design Calculations - Step 2 (Instructor Copy)

31 Dec 2010 | Teaching Materials | Contributor(s): Stella Quinones, Jose Valdez

A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related …

http://nanohub.org/resources/10260

How to see the occupation of electrons with strain

Closed | Responses: 1

How do I witness the variation of occupancies of electrons in the 6 conduction band minima's with the applied strain. Can anyone suggest me the good simulation tool for the same.

http://nanohub.org/answers/question/675

MOSFET Worked out problems 1

06 Dec 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Gerhard Klimeck

Short channel effects in a MOSFET due to channel length scaling are highlighted in this worked out problem.

http://nanohub.org/resources/10128

A methodology for SPICE-compatible modeling of nanoMOSFETs

17 Nov 2010 | Teaching Materials | Contributor(s): Alba Graciela Avila, David Espejo

An original SPICE-compatible model for Intel's 45nm High-K MOSFET is presented. It takes into account some Quantum-Mechanical Effects that occur at small scale like Channel Length Modulation (CLM), …

http://nanohub.org/resources/10024

ABACUS: Test for MOSFET Tool

17 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

The objective of this test is to give an idea to a self-learning students or to instructors in the case this test is used in a classroom the level of understanding of this topic when students have …

http://nanohub.org/resources/9882

Verification of the Validity of the MOSFET Tool

10 Oct 2010 | Teaching Materials | Contributor(s): Saumitra Raj Mehrotra, Dragica Vasileska, Gerhard Klimeck

Output characteristics of a bulk MOSFET are computed using MOSFET lab and compared with an analytical model based on Bulk-Charge theory. Parasitic resistance is used as a fitting parameter in the …

http://nanohub.org/resources/9841

Transformative Power Semiconductor Technologies to Impact 21st Century Energy Economy, and Space and Defense Electronics

19 Jul 2010 | Online Presentations | Contributor(s): Krishna Shenai

This talk will focus on advanced power semiconductor materials, devices, circuits and systems that are needed in order to address this daunting challenge. Specifically we will discuss emerging …

http://nanohub.org/resources/9343

Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness

08 Jul 2010 | Online Presentations | Contributor(s): Gerhard Klimeck, Mathieu Luisier

This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors.. Learning Objectives: GNR TFET Simulation pz Tight-Binding Orbital Model 3D …

http://nanohub.org/resources/9283