
NEEDS: Goals, Status, and Plans
18 Mar 2016  Presentation Materials  Contributor(s): Mark Lundstrom
This is the opening talk for 2016 MAPP workshop at U.C. Berkeley. It gives an overview of the NEEDS node in 2016.
http://nanohub.org/resources/23824

Too hot to handle? The emerging challenge of reliability/variability in selfheated FintFET, ETSOI, and GAAFET
11 Jan 2016  Presentation Materials  Contributor(s): Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small...
http://nanohub.org/resources/23372

MAPP: The Berkeley Model and Algorithm Prototyping Platform
11 Jan 2016  Presentation Materials  Contributor(s): Tianshi Wang, Aadithya V Karthik, Jaijeet Roychowdhury
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It provides an introduction to Berkeley Model and Algorithm Prototyping Platform...
http://nanohub.org/resources/23370

The NEEDS Initiative: Devices, Circuits, and Systems
07 Jan 2016  Presentation Materials  Contributor(s): Mark Lundstrom
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015.
This presentation provides an overview of the NEEDS initiative, which is funded...
http://nanohub.org/resources/23365

Advanced CMOS Device Physics for 7 nm and Beyond
16 Dec 2015  Presentation Materials  Contributor(s): Scott Thompson
This presentation is part of 2015 IEDM tutorials The industry march along Moore's Law continues and new semiconductor nodes at 7 and beyond will certainly happen. However, many device,...
http://nanohub.org/resources/23282

Emerging CMOS Technology at 5 nm and Beyond: Device Options and Tradeoffs
14 Dec 2015  Presentation Materials  Contributor(s): Mark Lundstrom, Xingshu Sun, Dimitri Antoniadis, Shaloo Rakheja
Device Options and Tradeoffs
http://nanohub.org/resources/23273

MATLAB: Negative Capacitance (NC) FET Model
05 Dec 2015  Downloads  Contributor(s): Muhammad Abdul Wahab, Muhammad A. Alam
MATLAB model that calculates the QV, CV, and IV characteristics of the conventional MOSFET and NCFET.
http://nanohub.org/resources/23185

A Tutorial Introduction to NegativeCapacitor Landau Transistors: Perspectives on the Road Ahead
04 Dec 2015  Online Presentations  Contributor(s): Muhammad A. Alam
In this talk, I use a simple graphical approach to demystify the device and explain why the experimental results are easy to misinterpret. Since the NCFET is just a special case of a much broader...
http://nanohub.org/resources/23157

MVS Nanotransistor Model (Silicon)
02 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical parameters.
http://nanohub.org/publications/15/?v=4

MVS IIIV HEMT model
01 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical...
http://nanohub.org/publications/71/?v=1

MVS Nanotransistor Model
01 Dec 2015  Compact Models  Contributor(s):
By Shaloo Rakheja^{1}, Dimitri Antoniadis^{1}
Massachusetts Institute of Technology (MIT)
The MIT Virtual Source (MVS) model is a semiempirical compact model for nanoscale transistors that accurately describes the physics of quasiballistic transistors with only a few physical parameters.
http://nanohub.org/publications/74/?v=1

VALint: the NEEDS VerilogA Checker (BETA)
21 Jan 2015  Tools  Contributor(s): Xufeng Wang, Geoffrey Coram, Colin McAndrew
VerilogA lint and pretty printer created by NEEDS
http://nanohub.org/resources/vachecker

Thermoelectric Device Compact Model
01 Sep 2015  Compact Models  Contributor(s):
By Xufeng Wang^{1}, Kyle Conrad^{1}, Jesse Maassen^{1}, Mark Lundstrom^{1}
Purdue University
The NEEDS thermoelectric compact model describes a homogeneous segment of thermoelectric material and serves as a basic building block for complex electrothermal system.
http://nanohub.org/publications/80/?v=1

Released Resonant Body Transistor with MIT Virtual Source (RBTMVS) Model
30 Aug 2015  Compact Models  Contributor(s):
By Bichoy W. Bahr^{1}, Dana Weinstein^{1}, Luca Daniel^{1}
Massachusetts Institute of Technology (MIT)
An RBT is a microelectromechanical (MEM) resonator with a transistor (FET) incorporated into the resonator structure to sense the mechanical vibrations. This is a fullyfeatured spicecompatible...
http://nanohub.org/publications/72/?v=1

IIIV Tunnel FET Model
20 Apr 2015  Compact Models  Contributor(s):
By Huichu Liu^{1}, Vinay Saripalli^{1}, Vijaykrishnan Narayanan^{1}, Suman Datta^{1}
Penn State University
The IIIV Tunnel FET Model is a lookup table based model, where the device current and capacitance characteristics are obtained from calibrated TCAD Sentaurus simulation.
http://nanohub.org/publications/12/?v=2

mCell Model
19 Jan 2015  Compact Models  Contributor(s):
By David M. Bromberg^{1}, Daniel H. Morris^{1}
Carnegie Mellon University
This model is a hybrid physics/empirical compact model that describes digital switching behavior of an mCell logic devices, where a write current moves a domain wall to switch the resistance of a...
http://nanohub.org/publications/13/?v=2

R3
21 Nov 2014  Compact Models  Contributor(s):
By Colin McAndrew
Freescale Semiconductor, Inc.
Compact model for polysilicon (poly) resistors, 3terminal JFETs, and diffused resistors.
http://nanohub.org/publications/26/?v=1

FET pH Sensor Model
03 Nov 2014  Compact Models  Contributor(s):
By Piyush Dak^{1}, Muhammad A. Alam^{1}
Purdue University
The FET pH sensor model is a surface potential compact model for FET based pH sensors that accurately describes the physics of electrolyte and surface charges that respond to pH.
http://nanohub.org/publications/11/?v=1

Spin Switch Model
23 Oct 2014  Compact Models  Contributor(s):
By Samiran Ganguly^{1}, Kerem Yunus Camsari^{1}, Supriyo Datta^{1}
Purdue University
We present a circuit/compact model for the Spin Switch created using a VerilogA based library of "spintronic lego blocks" building upon previous works on spin transport.
http://nanohub.org/publications/21/?v=1

Stanford University ResistiveSwitching Random Access Memory (RRAM) VerilogA Model
23 Oct 2014  Compact Models  Contributor(s):
By Zizhen Jiang^{1}, H.S. Philip Wong^{1}
Stanford University
The Stanford University RRAM Model is a SPICEcompatible compact model which describes switching performance for bipolar metal oxide RRAM.
http://nanohub.org/publications/19/?v=1