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MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

374

26 57 74 83 91 115 157 180 196 220 241 280 315 359 373 374

Users By Organization Type
Type Users
Unidentified 197 (52.67%)
Educational - University 171 (45.72%)
Industry 3 (0.8%)
Unemployed 2 (0.53%)
National Lab 1 (0.27%)
Users by Country of Residence
Country Users
us UNITED STATES 60 (41.1%)
in INDIA 47 (32.19%)
bd BANGLADESH 8 (5.48%)
es SPAIN 6 (4.11%)
cn CHINA 6 (4.11%)
kr KOREA, REPUBLIC OF 5 (3.42%)
ru RUSSIAN FEDERATION 5 (3.42%)
my MALAYSIA 5 (3.42%)
ir IRAN, ISLAMIC REPUBLIC OF 2 (1.37%)
gb UNITED KINGDOM 2 (1.37%)

Simulation Runs

2,489

248 395 450 506 533 665 784 861 1064 1135 1058 1244 2009 2424 2488 2489
Overview
Average Total
Wall Clock Time 1.86 hours 122.05 days
CPU time 2.12 seconds 55.52 minutes
Interaction Time 12.73 minutes 13.91 days

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