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MOSFET Simulation

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users


26 57 74 80

Users By Organization Type
Type Users
Unidentified 40 (50%)
Educational - University 39 (48.75%)
National Lab 1 (1.25%)
Users by Country of Residence
Country Users
us UNITED STATES 20 (58.82%)
in INDIA 3 (8.82%)
br BRAZIL 2 (5.88%)
cn CHINA 2 (5.88%)
fr FRANCE 1 (2.94%)
de GERMANY 1 (2.94%)
tw TAIWAN 1 (2.94%)
es SPAIN 1 (2.94%)
hr CROATIA 1 (2.94%)

Simulation Runs


248 395 450 479
Average Total
Wall Clock Time 6.28 hours 71.15 days
CPU time 2.61 seconds 11.84 minutes
Interaction Time 13 minutes 2.46 days

No classroom usage data was found. You may need to enable JavaScript to view this data., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.