Friday morning October 31, nanoHUB tools and home directories will be unavailable from 6 AM to noon (eastern time); we're getting a new file server! All tool sessions will be lost. Also, the web site will be unavailable for about 15 minutes sometime between 8-9 AM. close

Support

Support Options

Submit a Support Ticket

 

MOSFET Simulation

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

Launch Tool

You must login before you can run this tool.

Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

View All Supporting Documents

Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

148

26 57 74 83 91 115 148

Users By Organization Type
Type Users
Educational - University 78 (52.7%)
Unidentified 68 (45.95%)
National Lab 1 (0.68%)
Industry 1 (0.68%)
Users by Country of Residence
Country Users
us UNITED STATES 35 (52.24%)
in INDIA 13 (19.4%)
bd BANGLADESH 3 (4.48%)
cn CHINA 3 (4.48%)
ru RUSSIAN FEDERATION 3 (4.48%)
kr KOREA, REPUBLIC OF 3 (4.48%)
hr CROATIA 2 (2.99%)
br BRAZIL 2 (2.99%)
es SPAIN 2 (2.99%)
hk HONG KONG 1 (1.49%)

Simulation Runs

762

248 395 450 506 533 665 762
Overview
Average Total
Wall Clock Time 4.78 hours 82.98 days
CPU time 2.64 seconds 18.35 minutes
Interaction Time 13.95 minutes 4.04 days

nanoHUB.org, a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.