MOSFET Simulation

By Chen Shang1, Sankarsh Ramadas1, Tanya Faltens1, derrick kearney1, Krishna Madhavan1

1. Purdue University

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

659

26 57 74 83 91 115 157 180 196 219 241 280 315 359 373 382 398 431 486 504 528 568 611 631 658 659

Users By Organization Type
Type Users
Unidentified 441 (66.92%)
Educational - University 209 (31.71%)
Industry 4 (0.61%)
National Lab 3 (0.46%)
Unemployed 2 (0.3%)
Users by Country of Residence
Country Users
us UNITED STATES 77 (43.26%)
in INDIA 54 (30.34%)
bd BANGLADESH 9 (5.06%)
es SPAIN 8 (4.49%)
cn CHINA 7 (3.93%)
my MALAYSIA 6 (3.37%)
kr KOREA, REPUBLIC OF 5 (2.81%)
ru RUSSIAN FEDERATION 5 (2.81%)
it ITALY 4 (2.25%)
fr FRANCE 3 (1.69%)

Simulation Runs

4,754

248 395 450 506 533 665 784 861 1064 967 1058 1244 2009 2424 2488 2509 2549 2681 2848 2918 3011 3222 3513 4489 4753 4754
Overview
Average Total
Wall Clock Time 1.72 hours 230.09 days
CPU time 1.95 seconds 1.74 hours
Interaction Time 11.43 minutes 25.42 days