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MOSFET Simulation

Displays drain current as a function of source-drain voltage for different values of gate voltage, gate dimensions, substrate material, and oxide material in an n-type MOSFET.

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Version 1.0 - published on 23 Apr 2014

doi:10.4231/D3MP4VN5D cite this

Open source: license | download

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Usage

World usage

Location of all "MOSFET Simulation" Users Since Its Posting

Simulation Users

180

26 57 74 83 91 115 157 180 180

Users By Organization Type
Type Users
Educational - University 89 (49.44%)
Unidentified 89 (49.44%)
Industry 1 (0.56%)
National Lab 1 (0.56%)
Users by Country of Residence
Country Users
us UNITED STATES 38 (50.67%)
in INDIA 16 (21.33%)
ru RUSSIAN FEDERATION 3 (4%)
cn CHINA 3 (4%)
my MALAYSIA 3 (4%)
bd BANGLADESH 3 (4%)
kr KOREA, REPUBLIC OF 3 (4%)
br BRAZIL 2 (2.67%)
hr CROATIA 2 (2.67%)
mx MEXICO 2 (2.67%)

Simulation Runs

861

248 395 450 506 533 665 784 861 861
Overview
Average Total
Wall Clock Time 4.55 hours 87.5 days
CPU time 2.66 seconds 20.47 minutes
Interaction Time 13.59 minutes 4.36 days

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