IWCE 2015 presentation.  Abstract and more information to be added at a later date.

As logic devices continue to downscale, an increasing fraction of the channel atoms are in close contact with oxide atoms of the gate. These surface atoms experience a chemical environment that is distinct from the bulk-like environment found in thicker channels. Using the non- orthogonal tight-binding method Extended Huckel Theory (EHT), III-IV/High-k dielectric interfaces are constructed and electronic structure in the two transverse directions in the plane of the interface is calculated.

IWCE 2015

Researchers should cite this work as follows:

• Valencia-Hoyos, Daniel A., "Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels," in Computational Electronics (IWCE) 2015 International Workshop on, DOI: Not available in IEEE Xplore digital library. Full Website Here

• Daniel A. Valencia-Hoyos, Evan Michael Wilson, mark rodwell, Gerhard Klimeck, Michael Povolotskyi (2015), "Effect of the High-k Dielectric/Semiconductor Interface on Electronic Properties in Ultra-thin Channels," https://nanohub.org/resources/22875.

  BibTex | EndNote

1. high-k metal gates
2. nanoelectronics