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Carrier Concentration
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
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Abstract
The tool calculates the electron and hole concentration for a semiconductor material for five special cases: intrinsic, N-Type, P-Type, high temperature, and compensated.
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UTEP NCN Research Team
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This project is supported by NSF NCN Grant EEC-0634750.
References
[1] R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996.
[2] C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.
[3] B. G. Streetman, S. Banerjee, Solid State Electronic Devices. 5th Edition. Upper Saddle River, NJ: Pearson, 2004.
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