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The tool calculates the electron and hole concentration for a semiconductor material for five special cases: intrinsic, N-Type, P-Type, high temperature, and compensated.
UTEP NCN Research Team
This project is supported by NSF NCN Grant EEC-0634750.
 R. Pierret, Semiconductor Device Fundamentals. Addison Wesley Longman, 1996.  C. C. Hu, Modern Semiconductor Devices for Integrated Circuits. Upper Saddle River, NJ: Pearson, 2010.  B. G. Streetman, S. Banerjee, Solid State Electronic Devices. 5th Edition. Upper Saddle River, NJ: Pearson, 2004.
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- Carrier Concentration
- Fermi function
- density of states