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MOSFET Design
12 Jan 2021 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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Intro to MOS-Capacitor Tool
09 Jan 2013 | | Contributor(s):: Emmanuel Jose Ochoa, Stella Quinones
Understanding the effect of silicon doping, oxide (SiO2) thickness, gate type (n+poly/p+poly), and semiconductor type (n-type/p-type) on the flatband voltage, threshold voltage, surface potential and oxide voltage of a MOS-Capacitor.
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Mobility and Resistivity Tool
15 Jun 2012 | | Contributor(s):: Ivan Santos, Stephanie Michelle Sanchez, Stella Quinones
Understand how doping affects mobility and resistivity.
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Carrier Concentration
13 Jun 2012 | | Contributor(s):: Stephanie Michelle Sanchez, Ivan Santos, Stella Quinones
Calculate the carrier concentration for a semiconductor material as a function of doping and temperature.
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Minority Carrier Diffusion Equation (MCDE) Tool
26 Apr 2012 | | Contributor(s):: Ivan Santos, Stella Quinones
Apply the Minority Carrier Diffusion Equation (MCDE) to model excess carrier concentration as a function of time or distance.
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Semiconductor Doping
11 Apr 2012 | | Contributor(s):: Ivan Santos, Stella Quinones
Understand N-Type and P-Type Semiconductor Doping.
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MOSFET Design Calculations - Step 3
01 Apr 2012 | | Contributor(s):: Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Simulation I
06 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOSFET Design Calculations - Step 2
03 Mar 2012 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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MOS-C VFB Calculation: Comparison of Theoretical and Simulation Values
04 Feb 2012 | | Contributor(s):: Stella Quinones
The flatband voltage is calulated based on device physics theory and is compared to the value determined from the simulation of a MOS-Capacitor using the MOSCap simulation tool on the nanoHUB.org website. By completing this exercise, the student is able to compare the mathematical model of the...
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ECE 656: Electronic Transport in Semiconductors (Fall 2011)
19 Aug 2011 | | Contributor(s):: Mark Lundstrom
This course is about how charge flows in semiconductors with an emphasis on transport in nanoscale devices. The objective is to develop a broad understanding of basic concepts. The course is designed for those who work on electronic materials and devices – whether they are...
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MOSFET Design Calculations - Step 1
30 Dec 2010 | | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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PN Junctions: Simulation and Calculation of Electrostatic Variables
30 Dec 2010 | | Contributor(s):: Stella Quinones
Homework assignment that combines basic PN junction electrostatic variable calculations (Vbi, Xn, Xp and Emax) with the simulation of PN junctions for 2 sets of doping conditions. Both forward and reverse bias conditions are simulated. This homework assignment is designed for junior level...
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Illinois ECE 440: Solid State Electronic Devices Homework Assignments (Fall 2009)
28 Jan 2010 | | Contributor(s):: Mohamed Mohamed
Homework assignments for the Fall 2009 teaching of Illinois ECE 440: Solid State Electronic Devices.
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Archimedes, GNU Monte Carlo simulator
29 May 2008 | | Contributor(s):: Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials
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ECE 606: Principles of Semiconductor Devices
12 Nov 2008 | | Contributor(s):: Muhammad A. Alam
In the last 50 years, solid state devices like transistors have evolved from an interesting laboratory experiment to a technology with applications in all aspects of modern life. Making transistors is a complex process that requires unprecedented collaboration among material scientists, solid...
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Effect of Doping on Semiconductors
10 Sep 2008 | | Contributor(s):: Umberto Ravaioli, Nahil Sobh, Mohamed Mohamed
effects of doping in bulk silicon.
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Introduction to Solid State Electronic Devices Classes Tools
26 Jul 2008 | | Contributor(s):: Mohamed Mohamed, Nahil Sobh, Kyeong-hyun Park
Tools to complement Illinois Solid State Electronic Devices Classes
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Illinois ECE 440: Solid State Electronic Devices
18 Aug 2008 | | Contributor(s):: Eric Pop
The goals of this course are to give the student an understanding of the elements of semiconductor physics and principles of semiconductor devices that (a) constitute the foundation required for an electrical engineering major to take follow-on courses, and (b) represent the essential basic...
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tsuprem4
30 Apr 2007 | | Contributor(s):: Steven Clark
TSUPREM-4 is a computer program for simulating the processing steps used in the manufacture of silicon integrated circuits and discrete devices.