-
The Road Ahead
18 Apr 2024 | | Contributor(s):: Robert Patti
-
The Ultimate SuperComputer-on-a-Chip for Massive Big Data and Highly Iterative Algorithms
10 Apr 2024 | | Contributor(s):: Veljko M. Milutinovic
ECE 606: Solid State Devices I - Guest LectureThis presentation analyses the essence of DataFlow SuperComputing, defines its advantages and sheds lighton the related programming model.DataFlow computers, compared to ControlFlow computers, offer speedups of 20 to 200 (even 2000 for some...
-
ECE 606 L3.3: Crystals - Density of Definitions and Applications to Common Material
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
ECE 606 L7.2 Bandstructure - Solutions
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
-
Design and Architecture of RISC Processors For GaAs VLSI
13 Apr 2023 | | Contributor(s):: Veljko M. Milutinovic
-
Moore’s Law Extension and Beyond
19 Nov 2018 | | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
-
Equipment, Techniques, and Growth of Ultra-High Purity AlGaAs-GaAs Heterostructures by Molecular Beam Epitaxy
26 May 2017 | | Contributor(s):: Geoff Gardner
In this talk I detail research and investigation into critical equipment and materials engineering issues related to the quality of the fabricated 2DEG systems. I also will present data that demonstrates the critical role gallium purity plays in 2DEG mobility.
-
Epitaxial Strategies for High Power Optically Pumped Vertical External Cavity Surface Emitting Lasers and Metamorphic Antimonide Solar Cells
05 Dec 2016 | | Contributor(s):: Ganesh Balakrishnan
We present antimonide-based photovoltaic cells grown on GaAs and Silicon substrates for use as sub-cells in metamorphic multi-junction solar cells. These antimonide cells, based on GaSb, are designed to absorb near-infrared photons. The GaSb layer is grown on either GaAs or Silicon substrates.
-
nanoHUB Simulation Activity - Orientations of Common Single Crystal Substrates
07 Jun 2016 | | Contributor(s):: Tanya Faltens
NEW Version 2! (10/17/16) Now includes a link to the saved set of simulations, that can be shared instantly with any nanoHUB user. Other minor edits to update the activity and fix errors. In this activity, you will use Crystal Viewer to create crystal structures with surfaces that are...
-
ab initio Model for Mobility and Seebeck coefficient using Boltzmann Transport (aMoBT) equation
11 Jun 2015 | | Contributor(s):: Alireza Faghaninia, Joel Ager (editor), Cynthia S Lo (editor)
ab initio electronic transport model to calculate low-field electrical mobility and Seebeck coefficient of semiconductors in Boltzmann transport framework.
-
Exploring New Channel Materials for Nanoscale CMOS
28 Jun 2013 | | Contributor(s):: Anisur Rahman
The improved transport properties of new channel materials, such as Ge and III-V semiconductors, along with new device designs, such as dual gate, tri gate or FinFETs, are expected to enhance the performance of nanoscale CMOS devices. Novel process techniques, such as ALD, high-# dielectrics, and...
-
Exit code 139
Q&A|Closed | Responses: 1
GaAs with biaxial strain, swept from -3% to +3% produces the following error:
Problem launching job: Program...
https://nanohub.org/answers/question/1217
-
Why quantum dot simulation domain must contain multi-million atoms?
11 Jan 2013 | | Contributor(s):: Muhammad Usman
The InGaAs quantum dots obtained from the self-assembly growth process are heavily strained. The long-range strain and piezoelectric fields significantly modifies the electronic structure of the quantum dots. This imposes a critical constraint on the minimum size of the simulation domain to study...
-
DBR Laser Simulator
07 Sep 2012 | | Contributor(s):: Nikhil Sancheti, Lynford Goddard, Christopher Adam Edwards
Describes properties of a GaAs/AlGaAs DBR laser
-
Quantitative Modeling and Simulation of Quantum Dots
16 Jul 2010 | | Contributor(s):: Muhammad Usman
Quantum dots grown by self-assembly process are typically constructed by 50,000 to 5,000,000 structural atoms which confine a small, countable number of extra electrons or holes in a space that is comparable in size to the electron wavelength. Under such conditions quantum dots can be interpreted...
-
Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
-
Self-Assembled Quantum Dot Structure (pyramid)
01 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
-
Quantum Dot Wave Function (still image)
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
-
Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
-
How extensively have nanoparticles been tested in the field of solar cells?
Q&A|Closed | Responses: 2
I have seen research that has included silver nanoparticles placed in the wafers of Si. I’ve also seen GaN...
https://nanohub.org/answers/question/685