
A UCSD analytic TFET model
18 Dec 2015  Downloads  Contributor(s): Jianzhi Wu, Yuan Taur
A continuous, analytic IV model is developed for doublegate and nanowire tunnel FETs with 3D density of states, including depletion in the source. At the core of the model is a...
http://nanohub.org/resources/23350

[Illinois] Modeling and Characterization of Anisotropic Objects by Volume Integral Equation Methods
10 Mar 2015  Online Presentations  Contributor(s): Lin Sun
Lin Sun received her B.S. and M.S. degrees in Electrical Engineering from Tsinghua University, Beijing, China, in 2001 and 2004 and Ph.D. degree in Electrical and Computer Engineering from the...
http://nanohub.org/resources/22027

Mathematical Models and Simulations Workshop Presentation
10 Mar 2015  Presentation Materials  Contributor(s): Kelsey Joy Rodgers, Heidi A DiefesDux, Krishna Madhavan, Yi Kong
Developing engineers for a changing world presents a greater need for students to understand simulations. Understanding mathematical models and simulations are skills that all engineers need for...
http://nanohub.org/resources/22017

[Illinois] Modeling and Characterization of Anisotropic Objects by Volume Integral Equation Methods
20 Jan 2015  Online Presentations  Contributor(s): Lin Sun
Lin Sun received her B.S. and M.S. degrees in Electrical Engineering from Tsinghua University, Beijing, China, in 2001 and 2004 and Ph.D. degree in Electrical and Computer Engineering from the...
http://nanohub.org/resources/21847

Framework for Evaluating Simulations: Analysis of Student Developed Interactive Computer Tools
21 Jul 2014  Papers  Contributor(s): Kelsey Joy Rodgers, Heidi A DiefesDux, Krishna Madhavan
Computer simulations are discussed in the learning environment from two major perspectives: 1) teaching students how to build simulations and 2) developing simulations to teach students targeted...
http://nanohub.org/resources/21266

[Illinois] MCB 493 Neural Systems Modeling
29 Oct 2013  Courses  Contributor(s): Thomas J. Anastasio
The purpose of this independent study is to give students handson experience in using computers to model neural systems. A neural system is a system of interconnected neural elements, or units....
http://nanohub.org/resources/16704

Linfeng He
http://nanohub.org/members/83280

Model Validation Document for "A MetaAnalysis of Carbon Nanotube Pulmonary Toxicity Studies – How Physical Dimensions and Impurities Affect the Toxicity of Carbon Nanotubes"
19 Nov 2012  Papers  Contributor(s): Jeremy M Gernand, Elizabeth Casman
This document contains model learning statistics, and structure of the models utilized in the paper “A metaanalysis of carbon nanotube pulmonary toxicity studies – How physical dimensions and...
http://nanohub.org/resources/15901

[Illinois] Coarsegrained and Multiscale Modeling of Biological Systems
19 Jun 2012  Online Presentations  Contributor(s): Emad Tajkhorshid
…
http://nanohub.org/resources/14319

Dec 07 2011
International Semiconductor Device Research Symposium (ISDRS) 2011
The International Semiconductor Device Research Symposium is a biennial conference on exploratory research in electronic and photonic materials and devices. Bringing together diverse participants,...
http://nanohub.org/events/details/323

Bulk Monte Carlo Learning Materials
By completing the Bulk Monte Carlo Lab exercises and tests, users will be able to: a) understand the way the Boltzmann Transport Equation (BTE) is solved using the Monte Carlo method, b) the...
http://nanohub.org/wiki/BMC

Nanoelectronics and Modeling at the Nanoscale
30 Jun 2011  Series  Contributor(s): Dragica Vasileska, Gerhard Klimeck
Nanoelectronics refers to the use of nanotechnology on electronic components, especially transistors. Although the term nanotechnology is generally defined as utilizing technology less than 100 nm...
http://nanohub.org/resources/11577

What are the proper transport models at the nanoscale?
30 Jun 2011  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This presentation is part of the series Nanoelectronics and Modeling at the Nanoscale
http://nanohub.org/resources/11574

General Concepts of Modeling Semiconductor Devices
27 Jun 2011  Teaching Materials  Contributor(s): Dragica Vasileska, Gerhard Klimeck
This presentation is part of a series: Nanoelectronics and Modeling at the Nanoscale. It elucidates on the various methodologies needed for modeling semiconductor devices.
http://nanohub.org/resources/11493

Tutorial 4: FarFromEquilibrium Quantum Transport
29 Mar 2011  Courses  Contributor(s): Gerhard Klimeck
These lectures focus on the application of the theories using the nanoelectronic modeling tools NEMO 1 D, NEMO 3D, and OMEN to realistically extended devices. Topics to be covered are realistic...
http://nanohub.org/resources/11042

Tutorial 4b: Introduction to the NEMO3D Tool  Electronic Structure and Transport in 3D
29 Mar 2011  Online Presentations  Contributor(s): Gerhard Klimeck
Electronic Structure and Transport in 3D  Quantum Dots, Nanowires and UltraThin Body Transistors
http://nanohub.org/resources/11049

Illinois CNST Annual Nanotechnology Workshop 2010 Lecture 10: The Role of Molecular Modeling in Bionanotechnology
11 Mar 2011  Online Presentations  Contributor(s): Klaus Schulten
http://nanohub.org/resources/10681

2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011  Workshops
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
http://nanohub.org/resources/8878

Nanoelectronic Modeling Lecture 41: FullBand and Atomistic Simulation of Realistic 40nm InAs HEMT
05 Aug 2010  Online Presentations  Contributor(s): Gerhard Klimeck, Neerav Kharche, Neophytos Neophytou, Mathieu Luisier
This presentation demonstrates the OMEN capabilities to perform a multiscale simulation of advanced InAsbased high mobility transistors.
Learning Objectives:
Quantum Transport...
http://nanohub.org/resources/9285

Nanoelectronic Modeling Lecture 40: Performance Limitations of Graphene Nanoribbon Tunneling FETS due to Line Edge Roughness
05 Aug 2010  Online Presentations  Contributor(s): Gerhard Klimeck, Mathieu Luisier
This presentation the effects of line edge roughness on graphene nano ribbon (GNR) transitors..
Learning Objectives:
GNR TFET Simulation
pz TightBinding Orbital Model
3D...
http://nanohub.org/resources/9283