Tags: MOS

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  1. ABACUS—Introduction to Semiconductor Devices

    When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...

    http://nanohub.org/wiki/EduSemiconductor

  2. ECE 695A Lecture 13R: Review Questions

    19 Feb 2013 | | Contributor(s):: Muhammad Alam

    Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...

  3. ECE 606 Lecture 21: MOS Electrostatics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  4. ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics

    26 Nov 2012 | | Contributor(s):: Gerhard Klimeck

  5. Uniform Methodology of Benchmarking Beyond-CMOS Devices

    31 Oct 2012 | | Contributor(s):: Dmitri Nikonov

    Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...

  6. Nanoscale Transistors Lecture 4: MOS Electrostatics

    19 Jul 2012 | | Contributor(s):: Mark Lundstrom

  7. OMEN Nanowire: solve the challenge

    05 Feb 2011 | | Contributor(s):: SungGeun Kim

    This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.

  8. Analytical and Numerical Solution of the Double Barrier Problem

    28 Jun 2010 | | Contributor(s):: Gerhard Klimeck, Parijat Sengupta, Dragica Vasileska

    Tunneling is fully quantum-mechanical effect that does not have classical analog. Tunneling has revolutionized surface science by its utilization in scanning tunneling microscopes. In some device applications tunneling is required for the operation of the device (Resonant tunneling diodes,...

  9. Illinois ECE 440 Solid State Electronic Devices, Lecture 30: Intro MOS Transistor

    02 Mar 2010 | | Contributor(s):: Eric Pop

  10. Illinois ECE 440 Solid State Electronic Devices, Lecture 31: MOS Capacitor

    02 Mar 2010 | | Contributor(s):: Eric Pop

  11. Illinois ECE 440 Solid State Electronic Devices, Lecture 32: MOS Threshold Voltage

    02 Mar 2010 | | Contributor(s):: Eric Pop

  12. Illinois ECE 440 Solid State Electronic Devices, Lecture 33: MOS Capacitance

    02 Mar 2010 | | Contributor(s):: Eric Pop

  13. Illinois ECE 440: MOS Field-Effect Transistor Homework

    28 Jan 2010 | | Contributor(s):: Mohamed Mohamed

    This homework covers Output Characteristics and Mobility Model of MOSFETs.

  14. Band Structure Lab Demonstration: Bulk Strain

    12 Jun 2009 | | Contributor(s):: Gerhard Klimeck

    This video shows an electronic structure calculation of bulk Si using Band Structure Lab. Several powerful features of this tool are demonstrated.

  15. MOSCap Demonstration: MOS Capacitor Simulation

    11 Jun 2009 | | Contributor(s):: Gerhard Klimeck, Benjamin P Haley

    This video shows the simulation of a MOS capacitor using the MOSCAP tool. Several powerful analytic features of this tool are demonstrated.

  16. ECE 606 Lecture 33: MOS Electrostatics II

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  17. ECE 606 Lecture 34: MOSCAP Frequency Response

    16 Apr 2009 | | Contributor(s):: Muhammad A. Alam

  18. MOSCap: First-Time User Guide

    30 Mar 2009 | | Contributor(s):: SungGeun Kim, Benjamin P Haley, Gerhard Klimeck

    This first-time user guide provides an introduction to MOSCap. The MOSCap tool simulates the one-dimensional (along the growth direction) electrostatics in typical single and dual-gate Metal-Oxide-Semiconductor device structures as a function of device size, geometry, oxide charge, temperature,...

  19. ECE 606 Lecture 32: MOS Electrostatics I

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam

  20. ECE 606 Lecture 26: Schottky Diode II

    19 Nov 2008 | | Contributor(s):: Muhammad A. Alam