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Thermal Transport in Layered Materials, Devices, and Systems
11 Apr 2024 | | Contributor(s):: Eric Pop
The thermal properties of layered materials (like graphene and MoS2) are an active area of investigation, particularly due to their anisotropic and tunable thermal conductivity. We have studied their behavior as part of transistors, where self-heating is a major challenge for performance and...
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ABACUS Tool Suite and MOS Capacitors (Fall 2023)
19 Oct 2023 | | Contributor(s):: Gerhard Klimeck
In the sixth session, Dr. Klimeck will give a brief overview of ABACUS and demonstrate the MOS Capacitor Lab. Students can experiment with the fundamental component of a MOSfet that is any computer chip
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ECE 606 L28.1: MOS Electrostatics and MOScap - Background
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.2: MOScap - Band Diagram in Equilibrium and with Bias -->MOS cap
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.3: MOScap - Qualitative Q-V Characteristics of MOS Capacitor
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.4: MOScap - Induced Charges in Depletion and Inversion
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L28.5: MOScap - Exact Solution of the Electrostatic Problem
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L29.1: MOS Capacitor Signal Response - Introduction/Background
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L29.2: MOS Capacitor Signal Response - Small Signal Response
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L29.3: MOS Capacitor Signal Response - Large Signal Response
20 Jul 2023 | | Contributor(s):: Gerhard Klimeck
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George Valentin Vintila
https://nanohub.org/members/302756
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ABACUS—Introduction to Semiconductor Devices
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
https://nanohub.org/wiki/EduSemiconductor2
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Ubuntu based Interactive tool for the simulation of the MOS electrostatics
26 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...
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MOS Simulator
25 Jun 2019 | | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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ECE 695A Lecture 13R: Review Questions
19 Feb 2013 | | Contributor(s):: Muhammad Alam
Review Questions:Both SiH and SiO are involved in HCI degradation. Give two evidences.Why doesn’t HCI occur during NBTI stress condition?I suggested that HCI curve can shifted horizontally to form a universal curve, do you believe that I can do a corresponding vertical shift to form the universal...
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ECE 606 Lecture 21: MOS Electrostatics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
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ECE 606 Lecture 22: MOScap Frequence Response/MOSFET I-V Characteristics
26 Nov 2012 | | Contributor(s):: Gerhard Klimeck
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Uniform Methodology of Benchmarking Beyond-CMOS Devices
31 Oct 2012 | | Contributor(s):: Dmitri Nikonov
Multiple logic devices are presently under study within the Nanoelectronic Research Initiative (NRI) to carry the development of integrated circuits beyond the CMOS roadmap. Structure and operational principles of these devices are described.Theories used for benchmarking these devices are...
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Nanoscale Transistors Lecture 4: MOS Electrostatics
19 Jul 2012 | | Contributor(s):: Mark Lundstrom
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OMEN Nanowire: solve the challenge
05 Feb 2011 | | Contributor(s):: SungGeun Kim
This document includes a challenging problems for OMEN Nanowire users. It challenges users to establish a nanowire transistor structure such that it satisfy the ITRS 2010 requirements.