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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
Online Presentations | 15 Jul 2021 | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians
Online Presentations | 14 Jul 2021 | Contributor(s):: Adel Mfoukh, Marco Pala
Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...
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MOSFET Design
Series | 12 Jan 2021 | Contributor(s):: Stella Quinones, Jose Valdez
A series of homework assignments were created to introduce senior level undergraduate Electrical and Computer Engineering students to the design of MOSFETs by combining calculations of MOSFET related design parameters for a set of doping and oxide thickness values with the analysis of MOSFET...
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Compact NEGF-Based Solver for Double-Gate MOSFETs
Tools | 17 Nov 2020 | Contributor(s):: Fabian Hosenfeld, Alexander Kloes
Fast simulation of the DC current in a nanoscale double-gate MOSFET including thermionic emission and source-to-drain tunneling current.
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Zain Mansoor
https://nanohub.org/members/304736
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Chapter 1: A Primer on the MOSFet Simulator on nanoHUB.org
Papers | 19 Mar 2020 | Contributor(s):: Abdussamad Ahmed Muntahi, Dragica Vasileska, Shaikh S. Ahmed
The MOSFet simulator on nanoHUB.org (http://nanohub.org/resources/mosfet) simulates the equilibrium electrostatics and non-equilibrium current-voltage (I-V) characteristics of i) bulk, ii) dual-gate, and iii) SOI based field effect transistors. In this chapter, we will describe: i) the structure...
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Bhavya Bhardwaj
https://nanohub.org/members/265122
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ABACUS—Introduction to Semiconductor Devices
Wiki
When we hear the term semiconductor device, we may think first of the transistors in PCs or video game consoles, but transistors are the basic component in all of the electronic devices we use in...
https://nanohub.org/wiki/EduSemiconductor2
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Neilalohith Sharma
https://nanohub.org/members/257041
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Windows based Interactive tool for the simulation of the MOS electrostatics
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Windows based Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work...
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Ubuntu based Interactive tool for the simulation of the MOS electrostatics
Downloads | 26 Jun 2019 | Contributor(s):: Biswajeet Sahoo
This is a tool to simulate the MOS electrostatics. It includes the simulation of 2 terminal, 3 terminal and 4 terminal MOSFET. Everything is done for both nMOS and pMOS. This tool is designed to give users an interactive visual representation of how a MOSFET would work under...
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MOS Simulator
Tools | 25 Jun 2019 | Contributor(s):: Biswajeet Sahoo
National Institute of Technology,Rourkela. This is an Interactive tool for the simulation of the MOS electrostatics by varying the different parameters given in the sliders and input boxes
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Franco Vera
Franco Vera is a third year undergraduate at the University of Florida studying Materials Engineering with a focus on Electronic Materials. He is Currently working under Dr. Nancy Ruzycki to create...
https://nanohub.org/members/230324
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Ardinc Edis
https://nanohub.org/members/224255
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MUHAMMAD HUSSAIN
https://nanohub.org/members/219790
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Moore’s Law Extension and Beyond
Online Presentations | 19 Nov 2018 | Contributor(s):: Peide "Peter" Ye
In his talk, Ye will review his research efforts at Purdue on materials, structures and device architecture to support the microelectronic industry and extend Moore’s Law. The goal of the research is that it will lead to smarter, ubiquitous computing technology and keep us healthier,...
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Stephen Remillard
https://nanohub.org/members/202557
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Semiconductor & graphene mixtures, printable, for FETs, VFETS?
Q&A|Closed | Responses: 2
We tried synthesizing diketopyrroles, and we could not make them.
We have fiddled with P3HT, and we are concerned about its long term compatibility with our ionic liquid...
https://nanohub.org/answers/question/2036
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Elmira Tavakkoli
https://nanohub.org/members/196743