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Capacitive Deionization Cell Cycling, Low Current
02 Oct 2017 | | Contributor(s):: Xia Shang
The video shows parts of the simulation results in a change/discharge cycle for a conventional capacitive deionization cell. The model incorporates the following electrochemical process: electrosorption of electrical double layer, leakage current due to faradic reactions, immobile...
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Drift Diffusion Video Demonstration
24 Jun 2014 | | Contributor(s):: Saumitra Raj Mehrotra, Lynn Zentner, Joseph M. Cychosz
This video shows the use of the Drift-Diffusion Lab to simulate drift and diffusion carrier mechanisms in a semiconductor. The examples demonstrated will be helpful to a first time user in understanding the use of the tool.
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In-situ carbon nanotube tensile test
07 Oct 2011 | | Contributor(s):: Brian Demczyk
This represents the first in-situ tensile test observed in a transmission electron microscope.
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Quantum Dot Wave Function (Quantum Dot Lab)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The animation sequence shows various electronic states in an Indium Arsenide (InAs)/Gallium Arsenide (GaAs) self-assembled quantum dot.
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Self-Assembled Quantum Dot Structure (pyramid)
02 Feb 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
Pyramidal InAs Quantum dot. The quantum dot is 27 atomic monolayers wide at the base and 15 atomic monolayers tall.
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Quantum Dot Wave Function (still image)
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, David S. Ebert, Wei Qiao
Electron density of an artificial atom. The image shown displays the excited electron state in an Indium Arsenide (InAs) / Gallium Arsenide (GaAs) self-assembled quantum dot.
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Self-Assembled Quantum Dot Wave Structure
31 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Insoo Woo, Muhammad Usman, David S. Ebert
A 20nm wide and 5nm high dome shaped InAs quantum dot grown on GaAs and embedded in InAlAs is visualized.
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Electron Density in a Nanowire
30 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Saumitra Raj Mehrotra
Electron Density in a circular Silicon nanowire transistor.
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Tunneling in an Nanometer-Scaled Transistor
25 Jan 2011 | | Contributor(s):: Gerhard Klimeck, Mathieu Luisier, Neerav Kharche, George A. Howlett, Insoo Woo, David Ebert
Electrons tunneling through the gate of an ultra-scaled transistor.
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Crystal Viewer Tool Video Demonstration
14 Dec 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Lynn Zentner, Joseph M. Cychosz
This video shows the use of the Crystal Viewer Tool to visualize several material/crystal systems. The examples demonstrated will provide a first-time user with a basic understanding of how the tool works.
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Carrier Statistics Lab Video Demonstration
23 Sep 2010 | | Contributor(s):: Saumitra Raj Mehrotra
This video shows: Basic input deck for the tool,Simulation run of Temperature sweep with constant fermi level, Simulation run of Temperature sweep with constant doping.
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InAs: Evolution of iso-energy surfaces for heavy, light, and split-off holes due to uniaxial strain.
25 May 2010 | | Contributor(s):: Abhijeet Paul, Denis Areshkin, Gerhard Klimeck
Movie was generated using Band Structure Lab tool at nanoHUB and allows to scan over four parameters:Hole energy measured from the top of the corresponding band (i.e. the origin of energy scales for LH and SOH is different)Strain direction: [001], [110], [111]Carrier type: LH, HH, SOHStrain...
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Carbon nanotube bandstructure
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Carbon nanotubes are allotropes of carbon with a cylindrical nanostructure, and can be categorized into single-walled nanotubes (SWNT) and multi-walled nanotubes (MWNT). These cylindrical carbon molecules have novel properties that make them potentially useful in many nanotechnology applications,...
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Threshold voltage in a nanowire MOSFET
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, SungGeun Kim, Gerhard Klimeck
Threshold voltage in a metal oxide semiconductor field-effect transistor (better known as a MOSFET) is usually defined as the gate voltage at which an inversion layer forms at the interface between the insulating layer (oxide) and the substrate (body) of the transistor. A MOSFET is said to be...
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Resonant Tunneling Diode operation
22 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A resonant tunneling diode (RTD) is a type of diode with a resonant tunneling structure that allows electrons to tunnel through various resonant states at certain energy levels. RTDs can be fabricated using many different types of materials (such as III-V, type IV, II-VI semiconductors) and...
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CV profile with different oxide thickness
20 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
C-V (or capacitance-voltage) profiling refers to a technique used for the characterization of semiconductor materials and devices. C-V testing is often used during the characterization process to determine semiconductor parameters, particularly in MOSCAP and MOSFET structures.C-V measurements can...
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PN junction in forward bias
17 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
A PN junction is formed by joining p-type and n-type doped semiconductors together in very close contact. The p- and n-type semiconductors are conducting because of the available free carriers. However, because the carriers diffuse into the adjoining p and n regions by a process called...
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Local density of states
17 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
The concept of general density of states (DOS) in devices is, by definition, spatially invariant. However, in the case of inhomogeneous materials or in quantum confined structures, the density of states can be resolved in space. This is known as local density of states, or LDOS. …
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Graphite
17 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Graphene is a one-atom-thick planar sheet of sp2-bonded carbon atoms that are densely packed in a honeycomb crystal lattice. Graphene sheets are weakly bonded to other graphene layers above and below to form Graphite. The difference between two layers is approximately 0.335 nm [1].Graphite can...
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Graphene nanoribbon bandstructure
17 Apr 2010 | | Contributor(s):: Saumitra Raj Mehrotra, Gerhard Klimeck
Graphene nanoribbons (often abbreviated as GNR) are planar strips of graphene with a thickness of approximately one atom. Carbon atoms in graphene are sp2-hybridized with a carbon-carbon bond length of approximately 0.142 nm. As an electronic material, graphene exhibits many desirable properties,...