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Exploring Physical and Chemical control of molecular conductance: A computational study
31 Jan 2008 | | Contributor(s):: Barry D. Dunietz
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FDNS21: Conversion of Metal Oxide Films to 2D Metal Chalcogenide Films
27 Apr 2021 | | Contributor(s):: Judy Cha
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FDNS21: Predictive Models in Materials Making, 2D, 3D, 2.1D
21 Apr 2021 | | Contributor(s):: Boris I Yakobson
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Ferroelectric BaTiO3 Nanowires: Synthesis, Properties, and Device Applications
12 Feb 2008 | | Contributor(s):: Zhaoyu Wang
One dimensional ferroelectric nanowires have attracted much attention due to its interests in fundamental physics and potential applications in Nanoelectromechanical Systems (NEMS), non-volatile ferroelectric memories, and sensors. Domain structure is the most important property of ferroelectric...
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Illinois ECE 598EP Lecture 8 - Hot Chips: Thermal Conductivity of Solids
24 Jun 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Thermal Conductivity of SolidsTopics: Kinetic Theory of Energy Transport Simple Kinetic Theory Assumptions Phonon MFP and Scattering Time Silicon Film Thermal Conductivity Silicon Nanowire Thermal Conductivity Isotope Scattering Electron Thermal Conductivity Thermal Conductivity of Cu and Al
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Illinois ECE598XL Semiconductor Nanotechnology
14 Jun 2011 | | Contributor(s):: Xiuling Li
Lectures and discussion on current topics of semiconductor nanotechnology building block formation, characterization and device applications. Group IV, III-V and II-VI semiconductor nanowires, nanotubes and related nanophotonic and nanoelectronic device science and technology will be examined,...
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Introduction of MEMS Activity at Nano/Micro System Engineering Lab., Kyoto University
15 Sep 2007 | | Contributor(s):: OSAMU TABATA
We are aiming at the realization of microsystems and nanosystems with novel and unique functions by integrating functional elements in different domains such as mechanics, electronics, chemistry, optics and biotechnology. These micro/nano systems are expected to be novel machines, which will...
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Investigation of the Electrical Characteristics of Triple-Gate FinFETs and Silicon-Nanowire FETs
08 Aug 2006 | | Contributor(s):: Monica Taba, Gerhard Klimeck
Electrical characteristics of various Fin field-effect transistors (FinFETs) and silicon-nanowires were analyzed and compared using a modified three-dimensional self-consistent quantum-mechanical simulator in order to investigate device performance. FinFETs have been proposed to fulfill the...
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Is Seeing Believing? How to Think Visually and Analyze with Both Your Eyes and Brain
26 Mar 2007 | | Contributor(s):: David Ebert
This presentation will cover the basic techniques, and some of the available tools, for visualization, and will explain how to avoid miscommunicating information from visualizations.
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IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach
15 Jul 2021 | | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin
In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...
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IWCN 2021: Multiscale Modeling and Simulation of Advanced Photovoltaic Devices
14 Jul 2021 | | Contributor(s):: Yongjie Zou, Reza Vatan Meidanshahi, Raghuraj Hathwar, Stephen M. Goodnick
The introduction of new materials, device concepts and nanotechnology-based solutions to achieve high efficiency and low cost in photovoltaic (PV) devices requires modeling and simulation well beyond the current state of the art. New materials and heterojunction interfaces require atomistic...
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Josephson Detection of Multiband Effects in Superconductors
07 Sep 2020 | | Contributor(s):: James Williams
In this talk focus be given to the modification of conventional Josephson effects due to the loss of time reversal symmetry found to exist in proximity-induced Josephson junction of SnTe nanowires.
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KP Nanowire/UTB FET
22 Mar 2009 | | Contributor(s):: Mincheol Shin
Simulate Nanowire/UTB FETs Using KP method
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Landauer Approach to Thermoelectrics
21 Jun 2013 | | Contributor(s):: Changwook Jeong
Many efforts have been made to search for materials that maximize the thermoelectric (TE) figure of merit, ZT, but for decades, the improvement has been limited because of the interdependent material parameters that determine ZT. Recently, several breakthroughs have been reported by applying...
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Lecture 1: Percolation in Electronic Devices
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Even a casual review of modern electronics quickly convinces everyone that randomness of geometrical parameters must play a key role in understanding the transport properties. Despite the diversity of these phenomena however, the concepts percolation theory provides a broad theoretical framework...
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Lecture 2: Thresholds, Islands, and Fractals
04 Nov 2008 | | Contributor(s):: Muhammad A. Alam
Three basic concepts of the percolation theory – namely, percolation threshold, cluster size distribution, and fractal dimension – are defined and methods to calculate them are illustrated via elementary examples. These three concepts will form the theoretical foundation for discussion in Lecture...
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Limits of Thermal Processes and their Implications on Efficient Energy Utilization
27 Oct 2010 | | Contributor(s):: Arunava Majumdar
About 90 percent of the world’s energy use involves thermal processes – thermal engines to generate mechanical power; heating and cooling in buildings; heating involved in manufacturing of steel, cement, glass, petrochemicals etc. To identify opportunities for improving current...
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Magnetic Nanowires: Revolutionizing Hard Drives, Random Access Memory, & Cancer Treatment
18 Feb 2016 | | Contributor(s):: Beth Stadler
This talk will reveal synthesis secrets for nm-control of layer thicknesses, even for difficult alloys, which has enabled studies of magnetization reversal, magneto-elasticity, giant magnetoresistance, and spin transfer torqueswitching. These nanowires will mitigate the ITRS Roadmap’s...
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Materials strength: does size matter? nanoMATERIALS simulation toolkit tutorial
01 Feb 2007 | | Contributor(s):: Alejandro Strachan
Molecular dynamics (MD) is a powerful technique to characterize the fundamental, atomic-level processes that govern materials behavior and is playing an important role in our understanding of the new phenomena that arises in nanoscale and nanostructured materials and result in their unique...
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MCW07 Modeling Charging-based Switching in Molecular Transport Junctions
23 Aug 2007 | | Contributor(s):: Sina Yeganeh, Misha Galperin, Mark Ratner
We will discuss several proposed explanations for the switching and negative differential resistance behavior seen in some molecular junctions. It is shown that a proposed polaron model is successful in predicting both hysteresis and NDR behavior, and the model is elaborated with image charge...