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HCIS-15 Lecture: Nanodevices and Maxwell’s Demon
23 Jul 2007 | | Contributor(s):: Supriyo Datta
The 15th International Conference onNonequilibrium Carrier Dynamics in Semiconductors (HCIS-15) lecture.This 30 minute lecture coversroughly the same material as Lecture 1 of Concepts of Quantum Transport.
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Introduction: Nanoelectronics and the meaning of resistance
20 Aug 2008 | | Contributor(s):: Supriyo Datta
This lecture provides a brief overview of the five-day short course whose purpose is to introduce a unified viewpoint for a wide variety of nanoscale electronic devices of great interest for all kinds of applications including switching, energy conversion and sensing. Our objective, however, is...
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IWCN 2021: Ab initio Quantum Transport Simulation of Lateral Heterostructures Based on 2D Materials: Assessment of the Coupling Hamiltonians
14 Jul 2021 | | Contributor(s):: Adel Mfoukh, Marco Pala
Lateral heterostructures based on lattice-matched 2D materials are a promising option to design efficient electron devices such as MOSFETs [1], tunnel-FETs [2] and energy-filtering FETs [3]. In order to rigorously describe the transport through such heterostructures, an ab-initio approach based...
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IWCN 2021: Computational Research of CMOS Channel Material Benchmarking for Future Technology Nodes: Missions, Learnings, and Remaining Challenges
15 Jul 2021 | | Contributor(s):: raseong kim, Uygar Avci, Ian Alexander Young
In this preentation, we review our journey of doing CMOS channel material benchmarking for future technology nodes. Through the comprehensive computational research for past several years, we have successfully projected the performance of various novel material CMOS based on rigorous physics...
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IWCN 2021: How to Preserve the Kramers-Kronig Relation in Inelastic Atomistic Quantum Transport Calculations
15 Jul 2021 | | Contributor(s):: Daniel Alberto Lemus, James Charles, Tillmann Christoph Kubis
The nonequilibrium Green’s function method (NEGF) is often used to predict quantum transport in atomically resolved nanodevices. This yields a high numerical load when inelastic scattering is included. Atomistic NEGF had been regularly applied on nanodevices, such as nanotransistors....
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IWCN 2021: Interfacial Trap Effects in InAs Gate-all-around Nanowire Tunnel Field- Effect Transistors: First-Principles-Based Approach
15 Jul 2021 | | Contributor(s):: Hyeongu Lee, SeongHyeok Jeon, Cho Yucheol, Mincheol Shin
In this work, we investigated the effects of the traps, Arsenic dangling bond (AsDB) and Arsenic anti-site (AsIn) traps, in InAs gate-all-around nanowire TFETs, using the trap Hamiltonian obtained from the first-principles calculations. The transport properties were treated by nonequilibrium...
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IWCN 2021: Quantum Transport Simulation on 2D Ferroelectric Tunnel Junctions
15 Jul 2021 | | Contributor(s):: Eunyeong Yang, Jiwon Chang
In this work, we consider a simple asymmetric structure of metal-ferroelectric-metal (MFM) FTJs with two different ferroelectric materials, Hf0.5Zr0.5O2(HZO) and CuInP2S6(CIPS), respectively. To investigate the performance of FTJs theoretically, we first explore complex band structures of HZO...
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Lecture 1A: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
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Lecture 1b: Nanotransistors - A Bottom Up View
20 Jul 2010 | | Contributor(s):: Mark Lundstrom
MOSFET scaling continues to take transistors to smaller and smaller dimensions. Today, the MOSFET is a true nanoelectronic device – one of enormous importance for computing, data storage, and for communications. In this lecture, I will present a simple, physical model for the nanoscale...
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Lecture 1B: What and where is the resistance?
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To introduce a simple quantitative model that highlights the essential parameters that determine electrical conduction: the density of states in the channel, D and the rates at which electrons hop in and out of the two contacts, labeled source and drain. This model is used to explain...
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Lecture 2: Quantum of Conductance: Resistance and uncertainty
08 Sep 2010 |
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Lecture 2A: Quantum Transport
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...
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Lecture 2B: Quantum Transport
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To extend the simple model from Lectures 1 into the full-fledged Non-equilibrium Green’s Function (NEGF) – Landauer model by introducing a spatial grid of N points and turning numbers like into (NxN) matrices like , with incoherent scattering introduced through . This model will be...
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Lecture 3: Introduction to NEGF
08 Sep 2010 | | Contributor(s):: Supriyo Datta
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Lecture 3A: Spin Transport
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...
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Lecture 3B: Spin Transport
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...
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Lecture 4A: Energy Exchange and Maxwell's Demon
02 Sep 2008 | | Contributor(s):: Supriyo Datta
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a "Landauer-like picture" where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
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Lecture 4B: Energy Exchange and Maxwell’s Demon
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To incorporate distributed energy exchange processes into the previous models from lectures 1 through 3 which are based on a “Landauer-like picture” where the Joule heating associated with current flow occurs entirely in the two contacts.Although there is experimental evidence that...
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Lecture 5A: Correlations and Entanglement
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...
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Lecture 5B: Correlations and Entanglement
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To relate the one-electron picture used throughout these lectures to the more general but less tractable many-particle picture that underlies it. We introduce this new viewpoint using the example of Coulomb blockaded electronic devices that are difficult to model within the picture...