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  1. ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)

    04 Feb 2010 | | Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)

    Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.

  2. Jul 12 2010

    2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    This year’s summer school will have two components: a focus on nanoelectronic devices, with an introduction to spintronics and, second, tutorials on selected topics in nanotechnology. First, we...

    http://nanohub.org/events/details/270

  3. 2010 NCN@Purdue Summer School: Electronics from the Bottom Up

    18 Jan 2011 |

    Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

  4. 3D Topological Insulator Nanowire NEGF Simulation on GPU

    28 May 2015 | | Contributor(s):: Gaurav Gupta

    This code developed in C and CUDA simulates the carrier transport in three-dimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semi-infinite or metallic...

  5. Charging energy

    Open | Responses: 1

    >About the multi-electron picture you have been talking, >I would like to know, if I put two electrons at the >same time from the source to the channel rather than >putting one...

    http://nanohub.org/answers/question/5

  6. de Broglie wavelength

    Open | Responses: 1

    Regarding our discussion yesterday, you mentioned that DeBroglie wavelength in metals is approx. 1A. I...

    http://nanohub.org/answers/question/7

  7. Degeneracy factor for holes

    Open | Responses: 1

    You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is:

    ND+ =...

    http://nanohub.org/answers/question/3

  8. How to model electrical transport in large conductors?

    Closed | Responses: 0

    For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells. My questions...

    http://nanohub.org/answers/question/1154

  9. How to model metal/source drain MOSFET in nanoscale device simulators?

    Open | Responses: 1

    Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface? Thanks

    http://nanohub.org/answers/question/854

  10. Time-dependent NEGF

    Open | Responses: 1

    In the time-dependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting an I-V equation that is making it difficult for me to group terms. For instance, looking at...

    http://nanohub.org/answers/question/6

  11. A Tutorial for Nanoelectronics Simulation Tools

    out of 5 stars 

    03 Jul 2007 | | Contributor(s):: James K Fodor, Jing Guo

    This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...

  12. ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors

    out of 5 stars 

    16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck

    One-stop-shop for teaching semiconductor device education

  13. Abhijith Prakash

    http://nanohub.org/members/35214

  14. Abhisek Kole

    http://nanohub.org/members/149754

  15. Abu Raihan

    http://nanohub.org/members/57265

  16. Additional Tutorials on Selected Topics in Nanotechnology

    out of 5 stars 

    23 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja

    Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

  17. Analyzing Variability in Short-Channel Quantum Transport from Atomistic First Principles

    out of 5 stars 

    26 Oct 2015 | | Contributor(s):: Qing Shi

    IWCE 2015 invited presentation.  Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantum-transport variability from...

  18. Application of the Keldysh Formalism to Quantum Device Modeling and Analysis

    out of 5 stars 

    14 Jan 2008 | | Contributor(s):: Roger Lake

    The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...

  19. AQME Advancing Quantum Mechanics for Engineers

    Introduction to Advancing Quantum Mechanics for Engineers and Physicists “Advancing Quantum Mechanics for Engineers” (AQME) toolbox is an assemblage of individually authored tools...

    http://nanohub.org/wiki/AQME

  20. Archimedes, GNU Monte Carlo simulator

    out of 5 stars 

    29 May 2008 | | Contributor(s):: Jean Michel D Sellier

    GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials