
ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010   Contributor(s):: Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.

Jul 12 2010
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
This year’s summer school will have two components: a focus on nanoelectronic devices, with an introduction to spintronics and, second, tutorials on selected topics in nanotechnology. First, we use...
http://nanohub.org/events/details/270

2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.

3D Topological Insulator Nanowire NEGF Simulation on GPU
28 May 2015   Contributor(s):: Gaurav Gupta
This code developed in C and CUDA simulates the carrier transport in threedimensional (3D) topological insulator (TI) nanowire, with Bi2Se3 as exemplar material, with or without impurities, edge defects, acoustic phonons and vacancies for semiinfinite or metallic...

Charging energy
Open  Responses: 1
>About the multielectron picture you have been talking,
>I would like to know, if I put two electrons at the
>same time from the source to the channel rather than
>putting one...
http://nanohub.org/answers/question/5

de Broglie wavelength
Open  Responses: 1
Regarding our discussion yesterday, you mentioned that DeBroglie
wavelength in metals is approx. 1A. I...
http://nanohub.org/answers/question/7

Degeneracy factor for holes
Open  Responses: 1
You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is:
ND+ =...
http://nanohub.org/answers/question/3

How to model electrical transport in large conductors?
Closed  Responses: 0
For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells.
My questions...
http://nanohub.org/answers/question/1154

How to model metal/source drain MOSFET in nanoscale device simulators?
Open  Responses: 1
Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface?
Thanks
http://nanohub.org/answers/question/854

Timedependent NEGF
Open  Responses: 1
In the timedependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting
an IV equation that is making it difficult for me to group terms. For instance, looking at...
http://nanohub.org/answers/question/6

A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007   Contributor(s):: James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief introduction to the simulator is presented, followed by voiced presentations featuring the simulator in...

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

Abhijith Prakash
http://nanohub.org/members/35214

Abhisek Kole
http://nanohub.org/members/149754

Abu Raihan
http://nanohub.org/members/57265

Additional Tutorials on Selected Topics in Nanotechnology
23 Mar 2011   Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

Analyzing Variability in ShortChannel Quantum Transport from Atomistic First Principles
26 Oct 2015   Contributor(s):: Qing Shi
IWCE 2015 invited presentation. Due to random impurity fluctuations, the devicetodevice variability is a serious challenge to emerging nanoelectronics. In this talk I shall present a theoretical formalism and its numerical realization to predict quantumtransport variability from...

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008   Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...

AQME Advancing Quantum Mechanics for Engineers
Introduction to Advancing Quantum Mechanics for Engineers and Physicists
“Advancing Quantum Mechanics for Engineers” (AQME) toolbox is an assemblage of individually authored tools...
http://nanohub.org/wiki/AQME

Archimedes, GNU Monte Carlo simulator
29 May 2008   Contributor(s):: Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, IIIV materials