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ECE 495N: Fundamentals of Nanoelectronics Lecture Notes (Fall 2009)
04 Feb 2010 | Teaching Materials | Contributor(s): Mehdi Salmani Jelodar, Supriyo Datta (editor)
Lecture notes for the Fall 2009 teaching of ECE 495: Fundamentals of Nanoelectronics.
http://nanohub.org/resources/8340
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Jul 12 2010
2010 NCN@Purdue Summer School: Electronics from the Bottom Up
This year’s summer school will have two components: a focus on nanoelectronic devices, with an introduction to spintronics and, second, tutorials on selected topics in nanotechnology. First, we...
http://nanohub.org/index.php?option=com_events&task=details&id=270
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2010 NCN@Purdue Summer School: Electronics from the Bottom Up
18 Jan 2011 | Workshops
Electronics from the Bottom Up seeks to bring a new perspective to electronic devices – one that is designed to help realize the opportunities that nanotechnology presents.
http://nanohub.org/resources/8878
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Charging energy
Open | Responses: 1
>About the multi-electron picture you have been talking,
>I would like to know, if I put two electrons at the
>same time from the source to the channel rather than
>putting one...
http://nanohub.org/answers/question/5
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de Broglie wavelength
Open | Responses: 1
Regarding our discussion yesterday, you mentioned that DeBroglie
wavelength in metals is approx. 1A. I...
http://nanohub.org/answers/question/7
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Degeneracy factor for holes
Open | Responses: 1
You calculate the occupation of donor states in your book by requiring that only (00, 01, 10) states are possible. Therefore, the probability that donor states are unoccupied is:
ND+ =...
http://nanohub.org/answers/question/3
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How to model electrical transport in large conductors?
Closed | Responses: 0
For modeling electrical transport in large conductors one has to consider the inter unit coupling energy(t) as the reason behind the level broadening in the unit cells.
My questions...
http://nanohub.org/answers/question/1154
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How to model metal/source drain MOSFET in nanoscale device simulators?
Open | Responses: 1
Hello; I want to model metal source/drain MOSFET in nanoscale device simulators. How can I define schottky contact at source/drain channel interface?
Thanks
http://nanohub.org/answers/question/854
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Time-dependent NEGF
Open | Responses: 1
In the time-dependent NEGF equation, given a sigma_in(t,t’) due to the dot, I am getting
an I-V equation that is making it difficult for me to group terms. For instance, looking at...
http://nanohub.org/answers/question/6
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A Tutorial for Nanoelectronics Simulation Tools
03 Jul 2007 | Online Presentations | Contributor(s): James K Fodor, Jing Guo
This learning module introduces nanoHUB users to some of the available simulators. The simulators discussed are FETToy, nanoMOS, Schred, CNTbands, and QDot Lab. For each simulator, a brief...
http://nanohub.org/resources/2842
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | Tools | Contributor(s): Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
http://nanohub.org/resources/5065
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Abhijith Prakash
http://nanohub.org/members/35214
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Additional Tutorials on Selected Topics in Nanotechnology
29 Mar 2011 | Workshops | Contributor(s): Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
http://nanohub.org/resources/11041
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Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | Publications | Contributor(s): Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function...
http://nanohub.org/resources/3833
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AQME Advancing Quantum Mechanics for Engineers
Introduction to Advancing Quantum Mechanics for Engineers and Physicists
“Advancing Quantum Mechanics for Engineers” (AQME) toolbox is an assemblage of individually authored tools...
http://nanohub.org/wiki/AQME
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Archimedes, GNU Monte Carlo simulator
29 May 2008 | Tools | Contributor(s): Jean Michel D Sellier
GNU Monte Carlo simulation of 2D semiconductor devices, III-V materials
http://nanohub.org/resources/4671
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Artem Fedyay
Artem Fediai, M.S. is a post-graduate student at the Department of Physical and biomedical electronics of Kiev Polytechnic Institute. He graduated the same Department in 2007. He is assisting...
http://nanohub.org/members/40361
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Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | Online Presentations | Contributor(s): Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the...
http://nanohub.org/resources/10199
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Band Structure Lab: First-Time User Guide
15 Jun 2009 | Teaching Materials | Contributor(s): Abhijeet Paul, Benjamin P Haley, Gerhard Klimeck
This document provides useful information about Band Structure Lab. First-time users will find basic ideas about the physics behind the tool such as band formation, the Hamiltonian description,...
http://nanohub.org/resources/6935
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BNC Annual Research Symposium: Nanoelectronics and Semiconductor Devices
23 Apr 2007 | Online Presentations | Contributor(s): David Janes
This presentation is part of a collection of presentations describing the projects, people, and capabilities enhanced by research performed in the Birck Center, and a look at plans for the...
http://nanohub.org/resources/2632