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Unimore Resistive Random Access Memory (RRAM) Verilog-A Model
22 May 2019 | Compact Models | Contributor(s):
By Francesco Maria Puglisi1, Tommaso Zanotti1, Paolo Pavan1
Università di Modena e Reggio Emilia
The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).
https://nanohub.org/publications/289/?v=1
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Stanford 2D Semiconductor (S2DS) Transistor Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=3
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Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...
https://nanohub.org/publications/248/?v=1
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Stanford 2D Semiconductor (S2DS) Transistor Model
04 Apr 2016 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=2
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Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET
Presentation Materials | 11 Jan 2016 | Contributor(s):: Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small transistors. Moreover, nanoscale transistors degrade due to NBTI and HCI at vastly different...
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A Verilog-A Compact Model for Negative Capacitance FET
28 Nov 2015 | Compact Models | Contributor(s):
By Muhammad Abdul Wahab1, Muhammad A. Alam1
Purdue University
The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...
https://nanohub.org/publications/95/?v=1
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Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
Stanford University
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
https://nanohub.org/publications/18/?v=1
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Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
Presentation Materials | 12 Jun 2013 | Contributor(s):: Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
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Research Within Vasileska Group
Presentation Materials | 29 Jun 2010 | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.