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Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model
11 Aug 2018 | Compact Models | Contributor(s):
By Saurabh Vinayak Suryavanshi1, Eric Pop1
The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating...
Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction
12 Jul 2017 | Compact Models | Contributor(s):
By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2
1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France
This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...
Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET
11 Jan 2016 | | Contributor(s):: Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye
This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small transistors. Moreover, nanoscale transistors degrade due to NBTI and HCI at vastly different...
A Verilog-A Compact Model for Negative Capacitance FET
28 Nov 2015 | Compact Models | Contributor(s):
By Muhammad Abdul Wahab1, Muhammad A. Alam1
The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful...
Stanford 2D Semiconductor (S2DS) Transistor Model
22 Oct 2014 | Compact Models | Contributor(s):
The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.
Modeling Self-Heating Effects in SOI Devices and GaN HEMTs
12 Jun 2013 | | Contributor(s):: Dragica Vasileska
The role of self-heating effects is investigated in SOI devices and GaN HEMTs.
Research Within Vasileska Group
29 Jun 2010 | | Contributor(s):: Dragica Vasileska
This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.