All Categories (1-9 of 9)

1. Unimore Resistive Random Access Memory (RRAM) Verilog-A Model

   22 May 2019 | Compact Models | Contributor(s):

   By Francesco Maria Puglisi¹, Tommaso Zanotti¹, Paolo Pavan¹

   Università di Modena e Reggio Emilia

   The Unimore RRAM Verilog-A model is a physics-based compact model of bipolar RRAM which includes cycle-to-cycle variability, thermal effects, self-heating, and multilevel Random Telegraph Noise (RTN).

   https://nanohub.org/publications/289/?v=1

2. Stanford 2D Semiconductor (S2DS) Transistor Model

   11 Aug 2018 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=3

3. Stanford 2D Semiconductor Quasi-Ballistic Transistor Compact Model

   11 Aug 2018 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The S2DSb compact model is based on MVS model and captures the quasi-ballistic transport in two-dimensional field effect transistors (2D FETs). It also includes a detailed device self-heating model...

   https://nanohub.org/publications/248/?v=1

4. Stanford 2D Semiconductor (S2DS) Transistor Model

   04 Apr 2016 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=2

5. Too hot to handle? The emerging challenge of reliability/variability in self-heated FintFET, ETSOI, and GAA-FET

   11 Jan 2016 | | Contributor(s):: Muhammad A. Alam, Sang Hoon Shin, Muhammad Abdul Wahab, Jiangjiang Gu, Jingyun Zhang, Peide "Peter" Ye

   This presentation is part of the 8th IEEE/ACM Workshop on Variability Modeling and Characterization (VMC) 2015. It is difficult to control the geometry, doping, and thicknesses of small transistors. Moreover, nanoscale transistors degrade due to NBTI and HCI at vastly different...

6. A Verilog-A Compact Model for Negative Capacitance FET

   28 Nov 2015 | Compact Models | Contributor(s):

   By Muhammad Abdul Wahab¹, Muhammad A. Alam¹

   Purdue University

   The NC-FET compact model is a semi-physical verilog-A model of the negative capacitance transistor. We developed this self-consistent model with BSIM4/MVS and Landau theory. This model is useful to...

   https://nanohub.org/publications/95/?v=1

7. Stanford 2D Semiconductor (S2DS) Transistor Model

   22 Oct 2014 | Compact Models | Contributor(s):

   By Saurabh Vinayak Suryavanshi¹, Eric Pop¹

   Stanford University

   The Stanford 2D Semiconductor (S2DS) model is a physics-based, compact model for field-effect transistors (FETs) based on two-dimensional (2D) semiconductors such as MoS2.

   https://nanohub.org/publications/18/?v=1

8. Modeling Self-Heating Effects in SOI Devices and GaN HEMTs

   12 Jun 2013 | | Contributor(s):: Dragica Vasileska

   The role of self-heating effects is investigated in SOI devices and GaN HEMTs.

9. Research Within Vasileska Group

   29 Jun 2010 | | Contributor(s):: Dragica Vasileska

   This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs.