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  1. Compact model for Perpendicular Magnetic Anisotropy Magnetic Tunnel Junction

    03 Jul 2015 | Compact Models | Contributor(s):

    By You WANG1, Yue ZHANG2, Jacques-Olivier Klein3, Thibaut Devolder3, Dafiné Ravelosona3, Claude Chappert3, Weisheng Zhao2

    1. Institut Mines-Téléecom, Télécom-ParisTech, LTCI-CNRS-UMR 5141, Paris CEDEX 13, 75634, France 2. Spintronics Interdisciplinary Center, Beihang University, Beijing 100191, China 3. Institut d’Electronique Fondamentale, CNRS UMR 8622, University of Paris-Sud 11, 91405 Orsay, France

    This STT PMA MTJ model integrates the physical models of static, dynamic behaviors and reliability issues, which can be used to perform more accurate and complex reliability analysis of complex...

  2. Modeling Self-Heating Effects in SOI Devices and GaN HEMTs

    12 Jun 2013 | Presentation Materials | Contributor(s): Dragica Vasileska

    The role of self-heating effects is investigated in SOI devices and GaN HEMTs.

  3. Research Within Vasileska Group

    29 Jun 2010 | Online Presentations | Contributor(s): Dragica Vasileska

    This presentation outlines recent progress in reseach within Vasileska group in the area of random telegraph noise and thermal modeling, and modeling of GaN HEMTs., a resource for nanoscience and nanotechnology, is supported by the National Science Foundation and other funding agencies. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.