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A Signed Particle Formulation of Non-Relativistic Quantum Mechanics
03 Jun 2015 | Contributor(s):: Jean Michel D Sellier
A formulation of non-relativistic quantum mechanics in terms of Newtonian particles is presented in the shape of a set of three postulates. In this new theory, quantum systems are described by ensembles of signed particles which behave as field-less classical objects which carry a...
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ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Daniel Mejia, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor devices
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Additional Tutorials on Selected Topics in Nanotechnology
23 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
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Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | | Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy coordinate...
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AQME - Advancing Quantum Mechanics for Engineers
12 Aug 2008 | | Contributor(s):: Gerhard Klimeck, Xufeng Wang, Dragica Vasileska
One-stop-shop for teaching quantum mechanics for engineers
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Assembly for Nanotechnology Survey Courses
05 Nov 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Educational Tools for Classroom and Homework use to introduce nanotechnology concepts
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Atomistic Modeling and Simulation Tools for Nanoelectronics and their Deployment on nanoHUB.org
16 Dec 2010 | | Contributor(s):: Gerhard Klimeck
At the nanometer scale the concepts of device and material meet and a new device is a new material and vice versa. While atomistic device representations are novel to device physicists, the semiconductor materials modeling community usually treats infinitely periodic structures. Two electronic...
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Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
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Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
21 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
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Bandstructure Effects in Nano Devices With NEMO: from Basic Physics to Real Devices and to Global Impact on nanoHUB.org
08 Mar 2019 | | Contributor(s):: Gerhard Klimeck
This presentation will intuitively describe how bandstructure is modified at the nanometer scale and what some of the consequences are on the device performance.
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Computational Nanoscience, Lecture 26: Life Beyond DFT -- Computational Methods for Electron Correlations, Excitations, and Tunneling Transport
16 May 2008 | | Contributor(s):: Jeffrey B. Neaton
In this lecture, we provide a brief introduction to "beyond DFT" methods for studying excited state properties, optical properties, and transport properties. We discuss how the GW approximation to the self-energy corrects the quasiparticle excitations energies predicted by Kohn-Sham DFT. For...
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E304 L6.2.2: Nanoelectrics - Tunneling
15 Apr 2016 | | Contributor(s):: ASSIST ERC
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ECE 606 L6.1: Electron Tunneling - Transfer Matrix Method
28 Apr 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.2: Electron Tunneling - Tunneling Through a Single Barrier
28 Apr 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.3: Electron Tunneling - Tunneling Through a Double Barrier Structure
28 Apr 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.4: Electron Tunneling - Tunneling Through N Barriers - Formation of Bandstructure
28 Apr 2023 | | Contributor(s):: Gerhard Klimeck
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ECE 606 L6.5: Electron Tunneling - Analytical and Numerical Solution Strategies
28 Apr 2023 | | Contributor(s):: Gerhard Klimeck
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Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
This resource has been removed at the request of the author.A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially...
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Electron-Phonon and Electron-Electron Interactions in Quantum Transport
14 Jan 2008 | | Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...
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Energies and Lifetimes with Complex-Scaling
02 Apr 2012 | | Contributor(s):: Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.