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Tunneling Through Triangular Barrier: an Exercise for PCPBT
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23 Jul 2008 | | Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that a very good result can be obtained when the triangular barrier is approximated with 11 segment piece-wise constant potential barrier steps.www.eas.asu.edu/~vasileskNSF
ABACUS - Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008 | | Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
One-stop-shop for teaching semiconductor device education
Additional Tutorials on Selected Topics in Nanotechnology
23 Mar 2011 | | Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.
Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008 | | Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semi-conductor structures is studied numerically using the approach based on the non-equilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...
AQME - Advancing Quantum Mechanics for Engineers
12 Aug 2008 | | Contributor(s):: Gerhard Klimeck, Xufeng Wang, Dragica Vasileska
One-stop-shop for teaching quantum mechanics for engineers
Assembly for Nanotechnology Survey Courses
05 Nov 2008 | | Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Educational Tools for Classroom and Homework use to introduce nanotechnology concepts
Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016 | | Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spin-orbit-valley coupling in spin qubits to non-equilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...
Auger Generation as an Intrinsic Limit to Tunneling Field-Effect Transistor Performance
21 Sep 2016 | | Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...
Computational Nanoscience, Lecture 26: Life Beyond DFT -- Computational Methods for Electron Correlations, Excitations, and Tunneling Transport
16 May 2008 | | Contributor(s):: Jeffrey B. Neaton
In this lecture, we provide a brief introduction to "beyond DFT" methods for studying excited state properties, optical properties, and transport properties. We discuss how the GW approximation to the self-energy corrects the quasiparticle excitations energies predicted by Kohn-Sham DFT. For...
E304 L6.2.2: Nanoelectrics - Tunneling
15 Apr 2016 |
Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017 | | Contributor(s):: Igor Bejenari
A given review describes models based on Wentzel-Kramers-Brillouin approximation, which are used to obtain I-V characteristics for ballistic CNTFETs with Schottky-Barrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...
Electron-Phonon and Electron-Electron Interactions in Quantum Transport
14 Jan 2008 | | Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through sub-micron semi-conductor structures, where electronic state quantization, electron-electron interactions and electron-phonon interactions are important. We concentrate here on the most developed vertical quantum device,...
Energies and Lifetimes with Complex-Scaling
02 Apr 2012 | | Contributor(s):: Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a user-defined potential with a uniform complex-scaling transformation.
Finite Height Quantum Well: an Exercise for Band Structure
31 Jan 2008 | | Contributor(s):: David K. Ferry
Use the Resonant Tunneling Diodes simulation tool on nanoHUB to explore the effects of finite height quantum wells.Looking at a 2 barrier device, 300 K, no bias, other standard variables, and 3 nm thick barriers and a 7 nm quantum well, determine the energies of the two lowest quasi-bound states.
First Principles Non-Equilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling
01 Dec 2008 | | Contributor(s):: Kirk H. Bevan
Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex quantum mechanical phenomena such as wavefunction coupling, surface states, and interface bonds have begun...
Illinois ECE 598EP Lecture 12 - Hot Chips: Boundary Resistance and Thermometry
10 Jul 2009 | | Contributor(s):: Eric Pop, Omar N Sobh
Boundary Resistance and ThermometryTopics: Summary of Boundary Resistance Acoustic vs. Diffuse Mismatch Model Band to Band Tunneling Conduction Thermionic and Field Emission(3D) Photon Radiation Limit Photon Conductance of Nanoconstrictions Nanoscale Thermometry Scanning Thermal Microscopy
Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
26 Jun 2013 | | Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of present-day electronics. Semiconducting CNTs have large carrier...
K-12: Introduction to Quantum Wells
24 Nov 2008 | | Contributor(s):: David Beck, Mark M Budnik
A lesson plan for a 20-30 minute exercise for 4th and 5th grade Gifted and Talented students to explore the concept of quantum wells. The objectives of the lesson are:* The students will be able to understand the basic functions and concepts of quantum wells and tunneling.* Students will be able...
Lecture 3A: Spin Transport
20 Aug 2008 | | Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...
Lecture 3B: Spin Transport