
Tunneling Through Triangular Barrier: an Exercise for PCPBT
23 Jul 2008   Contributor(s):: Dragica Vasileska, Gerhard Klimeck
This exercise teaches the users that a very good result can be obtained when the triangular barrier is approximated with 11 segment piecewise constant potential barrier steps.www.eas.asu.edu/~vasileskNSF

ABACUS  Assembly of Basic Applications for Coordinated Understanding of Semiconductors
16 Jul 2008   Contributor(s):: Xufeng Wang, Dragica Vasileska, Gerhard Klimeck
Onestopshop for teaching semiconductor device education

Additional Tutorials on Selected Topics in Nanotechnology
23 Mar 2011   Contributor(s):: Gerhard Klimeck, Umesh V. Waghmare, Timothy S Fisher, N. S. Vidhyadhiraja
Select tutorials in nanotechnology, a part of the 2010 NCN@Purdue Summer School: Electronics from the Bottom Up.

Application of the Keldysh Formalism to Quantum Device Modeling and Analysis
14 Jan 2008   Contributor(s):: Roger Lake
The effect of inelastic scattering on quantum electron transport through layered semiconductor structures is studied numerically using the approach based on the nonequilibrium Green's function formalism of Keldysh, Kadanoff, and Baym. The Markov assumption is not made, and the energy...

AQME  Advancing Quantum Mechanics for Engineers
12 Aug 2008   Contributor(s):: Gerhard Klimeck, Xufeng Wang, Dragica Vasileska
Onestopshop for teaching quantum mechanics for engineers

Assembly for Nanotechnology Survey Courses
05 Nov 2008   Contributor(s):: Gerhard Klimeck, Dragica Vasileska
Educational Tools for Classroom and Homework use to introduce nanotechnology concepts

Atomistic Modeling of Nano Devices: From Qubits to Transistors
12 Apr 2016   Contributor(s):: Rajib Rahman
In this talk, I will describe such a framework that can capture complex interactions ranging from exchange and spinorbitvalley coupling in spin qubits to nonequilibrium charge transport in tunneling transistors. I will show how atomistic full configuration interaction calculations of exchange...

Auger Generation as an Intrinsic Limit to Tunneling FieldEffect Transistor Performance
21 Sep 2016   Contributor(s):: Jamie Teherani
Many in the microelectronics field view tunneling fieldeffect transistors (TFETs) as society’s best hope for achieving a > 10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly...

Computational Nanoscience, Lecture 26: Life Beyond DFT  Computational Methods for Electron Correlations, Excitations, and Tunneling Transport
16 May 2008   Contributor(s):: Jeffrey B. Neaton
In this lecture, we provide a brief introduction to "beyond DFT" methods for studying excited state properties, optical properties, and transport properties. We discuss how the GW approximation to the selfenergy corrects the quasiparticle excitations energies predicted by KohnSham DFT. For...

E304 L6.2.2: Nanoelectrics  Tunneling
15 Apr 2016 

Electron Transport in Schottky Barrier CNTFETs
24 Oct 2017   Contributor(s):: Igor Bejenari
A given review describes models based on WentzelKramersBrillouin approximation, which are used to obtain IV characteristics for ballistic CNTFETs with SchottkyBarrier (SB) contacts. The SB is supposed to be an exponentially or linearly decaying function along the channel. The ...

ElectronPhonon and ElectronElectron Interactions in Quantum Transport
14 Jan 2008   Contributor(s):: Gerhard Klimeck
The objective of this work is to shed light on electron transport through submicron semiconductor structures, where electronic state quantization, electronelectron interactions and electronphonon interactions are important. We concentrate here on the most developed vertical quantum device,...

Energies and Lifetimes with ComplexScaling
02 Apr 2012   Contributor(s):: Daniel Lee Whitenack, Adam Wasserman
Calculate the resonance energies and lifetimes of a userdefined potential with a uniform complexscaling transformation.

Finite Height Quantum Well: an Exercise for Band Structure
31 Jan 2008   Contributor(s):: David K. Ferry
Use the Resonant Tunneling Diodes simulation tool on nanoHUB to explore the effects of finite height quantum wells.Looking at a 2 barrier device, 300 K, no bias, other standard variables, and 3 nm thick barriers and a 7 nm quantum well, determine the energies of the two lowest quasibound states.

First Principles NonEquilibrium Green's Function Modeling of Vacum and Oxide Barrier Tunneling
01 Dec 2008   Contributor(s):: Kirk H. Bevan
Vacuum and oxide barrier electron tunneling phenomena have been studied at length for several decades. Yet with electron device barrier widths now commonly measured in atomic units, complex quantum mechanical phenomena such as wavefunction coupling, surface states, and interface bonds have begun...

Illinois ECE 598EP Lecture 12  Hot Chips: Boundary Resistance and Thermometry
10 Jul 2009   Contributor(s):: Eric Pop, Omar N Sobh
Boundary Resistance and ThermometryTopics: Summary of Boundary Resistance Acoustic vs. Diffuse Mismatch Model Band to Band Tunneling Conduction Thermionic and Field Emission(3D) Photon Radiation Limit Photon Conductance of Nanoconstrictions Nanoscale Thermometry Scanning Thermal Microscopy

Inelastic Transport in Carbon Nanotube Electronic and Optoelectronic Devices
26 Jun 2013   Contributor(s):: Siyu Koswatta
Discovered in the early 1990's, carbon nanotubes (CNTs) are found to have exceptional physical characteristics compared to conventional semiconductor materials, with much potential for devices surpassing the performance of presentday electronics. Semiconducting CNTs have large carrier...

K12: Introduction to Quantum Wells
24 Nov 2008   Contributor(s):: David Beck, Mark M Budnik
A lesson plan for a 2030 minute exercise for 4th and 5th grade Gifted and Talented students to explore the concept of quantum wells. The objectives of the lesson are:* The students will be able to understand the basic functions and concepts of quantum wells and tunneling.* Students will be able...

Lecture 3A: Spin Transport
20 Aug 2008   Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...

Lecture 3B: Spin Transport
20 Aug 2008   Contributor(s):: Supriyo Datta
Objective: To extend the model from Lectures 1 and 2 to include electron spin. Every electron is an elementary “magnet” with two states having opposite magnetic moments. Usually this has no major effect on device operation except to increase the conductance by a factor of two.But it is now...